Dependence on Crystalline Face of the Band Bending in Cs2 O‐Activated GaAs
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L. W. James | G. A. Antypas | R. L. Moon | R. Bell | R. Moon | G. Antypas | J. Edgecumbe | R. L. Bell | J. Edgecumbe
[1] L. W. James,et al. Behavior of Cesium Oxide as a Low Work‐Function Coating , 1970 .
[2] L. W. James,et al. Optimization of the InAsxP1−x–Cs2O Photocathode , 1971 .
[3] R. L. Bell,et al. 3-5 compound photocathodes: A new family of photoemitters with greatly improved performance , 1970 .
[4] A A Turnbull,et al. Photoemission from GaAs-Cs-O , 1968 .
[5] R. Bell,et al. Improved photoemitters using GaAs and InGaAs , 1968 .
[6] R. Bell,et al. CESIUM‐GaAs SCHOTTKY BARRIER HEIGHT , 1967 .
[7] L. W. James,et al. LONG‐WAVELENGTH THRESHOLD OF Cs2O‐COATED PHOTOEMITTERS , 1970 .
[8] H. Schade,et al. EFFICIENT PHOTOEMISSION FROM Ge‐DOPED GaAs GROWN BY LIQUID‐PHASE EPITAXY , 1971 .
[9] J. J. Scheer,et al. Fermi level stabilization at cesiated semiconductor surfaces , 1967 .
[10] J. J. Scheer,et al. GaAs-Cs: A new type of photoemitter , 1965 .