论文信息 - High-performance HEMT amplifiers with a simple low-loss matching network

High-performance HEMT amplifiers with a simple low-loss matching network

A report is presented on the design and performance of a K-band high electron mobility transistor (HEMT) amplifier whose passive circuit consists of low-loss suspended stripline elements. Single-stage amplifiers were built at 4 GHz and 22 GHz by using readily available commercial HEMT devices. In the desired frequency range from 21 to 23 GHz for the high-frequency design, the best spot noise temperatures were 150 K and 65 K at 21.5 GHz for room and liquid nitrogen temperatures, respectively. >

M. V. Schneider | Y. S. Wu | R. Peter

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