Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

[1]  S. Kimura,et al.  Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si , 1987 .

[2]  Yoshifumi Kawamoto,et al.  Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs , 1990 .

[3]  Koichi Kuroiwa,et al.  Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing , 1992 .

[4]  Masaki Saitoh,et al.  Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition , 1990 .

[5]  Il-hwan Kim,et al.  Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta_2O_5 film and the formation of interfacial SiO_2 , 1995 .

[6]  Hiroshi Shinriki,et al.  UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs , 1991 .

[7]  Yasushiro Nishioka,et al.  Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors , 1987 .

[8]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[9]  K. Ogiue,et al.  Ultra-thin Ta2O5dielectric film for high-speed bipolar memories , 1987, IEEE Transactions on Electron Devices.

[10]  Takashi Ito,et al.  Interfacial Oxidation of Silicon Substrates Through Ta2 O 5 Films , 1988 .

[11]  J. G. Ryan,et al.  Selective Studies of Crystalline Ta2 O 5 Films , 1986 .

[12]  G. Oehrlein Capacitance-voltage properties of thin Ta2O5 films on silicon , 1988 .

[13]  Shigeaki Zaima,et al.  Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVD , 1990 .

[14]  Sung Wook Park,et al.  Effects of oxidation conditions on the properties of tantalum oxide films on silicon substrates , 1992 .

[15]  S. Banerjee,et al.  Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layer , 1989 .

[16]  S. Kamiyama,et al.  Extended x‐ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods , 1995 .

[17]  H. Oikawa,et al.  Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memories , 1989 .

[18]  R. C. Weast CRC Handbook of Chemistry and Physics , 1973 .

[19]  P. Günter,et al.  Growth of tantalum oxide and lithium tantalate thin films by molecular beam epitaxy , 1995 .

[20]  W. Hitchens,et al.  Tantalum Oxide Thin Films for Dielectric Applications by Low‐Pressure Chemical Vapor Deposition Physical and Electrical Properties , 1993 .

[21]  J. Locquet,et al.  Characterization of a radio frequency plasma source for molecular beam epitaxial growth of high‐Tc superconductor films , 1992 .

[22]  Boon Loo,et al.  Microstructure analysis of thin films deposited by reactive evaporation and by reactive ion plating , 1989 .

[23]  Y. Tu,et al.  Characterization of reactively r.f.-sputtered tantalum oxide films , 1988 .

[24]  Satoshi Kamiyama,et al.  Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing , 1994 .

[25]  H. Ohlsén,et al.  Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen , 1996 .

[26]  Y. Kawamoto,et al.  Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs , 1995, Proceedings of International Electron Devices Meeting.

[27]  G. Oehrlein Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon , 1986 .

[28]  Gottlieb S. Oehrlein,et al.  Some properties of crystallized tantalum pentoxide thin films on silicon , 1984 .

[29]  H. Kim,et al.  The effect of substrate temperature on the composition and growth of tantalum oxide thin films deposited by plasma-enhanced chemical vapour deposition , 1991 .

[30]  S. Kimura,et al.  Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C , 1983 .

[31]  P. Chu,et al.  Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate , 1996 .

[32]  R. Devine,et al.  Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films , 1994 .

[33]  Y. Taga,et al.  Effects of additive elements on electrical properties of tantalum oxide films , 1994 .

[34]  A. Revesz The defect structure of grown silicon dioxide films , 1965 .

[35]  Shigeo Fujita,et al.  Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source , 1993 .

[36]  T. Moriizumi,et al.  Influence of Reactive Gas Pressure on the Properties of Thin Film Ta2O5 , 1987 .

[37]  P. Young dc electrical conduction in thin Ta2O5 films. I. Bulk‐limited conduction , 1976 .

[38]  Optical properties of tantalum oxide films on silicon , 1976 .

[39]  Y. Ohji,et al.  Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric] , 1996, IEEE Electron Device Letters.

[40]  Satoshi Oka,et al.  Photo-Process of Tantalum Oxide Films and Their Characteristics , 1988 .

[41]  K. Nomura,et al.  Some properties of RF sputtered Al sub 2 O sub 3 -Ta sub 2 O sub 5 composite thin films , 1991 .

[42]  J. J. Krajewski,et al.  Enhancement of the dielectric constant of Ta2O5through substitution with TiO2 , 1995, Nature.

[43]  Y. Ohji,et al.  Stoichiometry measurement and electric characteristics of thin‐film Ta2O5 insulator for ultra‐large‐scale integration , 1993 .

[44]  L. Stolt,et al.  Preparation of YBa2Cu3O7−x films and YBa2Cu3O7−x/Y2O3 multilayers using coevaporation and atomic oxygen , 1993 .