Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
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[1] S. Kimura,et al. Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si , 1987 .
[2] Yoshifumi Kawamoto,et al. Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs , 1990 .
[3] Koichi Kuroiwa,et al. Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing , 1992 .
[4] Masaki Saitoh,et al. Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition , 1990 .
[5] Il-hwan Kim,et al. Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta_2O_5 film and the formation of interfacial SiO_2 , 1995 .
[6] Hiroshi Shinriki,et al. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs , 1991 .
[7] Yasushiro Nishioka,et al. Influence of SiO2 at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors , 1987 .
[8] E. H. Nicollian,et al. Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .
[9] K. Ogiue,et al. Ultra-thin Ta2O5dielectric film for high-speed bipolar memories , 1987, IEEE Transactions on Electron Devices.
[10] Takashi Ito,et al. Interfacial Oxidation of Silicon Substrates Through Ta2 O 5 Films , 1988 .
[11] J. G. Ryan,et al. Selective Studies of Crystalline Ta2 O 5 Films , 1986 .
[12] G. Oehrlein. Capacitance-voltage properties of thin Ta2O5 films on silicon , 1988 .
[13] Shigeaki Zaima,et al. Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVD , 1990 .
[14] Sung Wook Park,et al. Effects of oxidation conditions on the properties of tantalum oxide films on silicon substrates , 1992 .
[15] S. Banerjee,et al. Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layer , 1989 .
[16] S. Kamiyama,et al. Extended x‐ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods , 1995 .
[17] H. Oikawa,et al. Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memories , 1989 .
[18] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .
[19] P. Günter,et al. Growth of tantalum oxide and lithium tantalate thin films by molecular beam epitaxy , 1995 .
[20] W. Hitchens,et al. Tantalum Oxide Thin Films for Dielectric Applications by Low‐Pressure Chemical Vapor Deposition Physical and Electrical Properties , 1993 .
[21] J. Locquet,et al. Characterization of a radio frequency plasma source for molecular beam epitaxial growth of high‐Tc superconductor films , 1992 .
[22] Boon Loo,et al. Microstructure analysis of thin films deposited by reactive evaporation and by reactive ion plating , 1989 .
[23] Y. Tu,et al. Characterization of reactively r.f.-sputtered tantalum oxide films , 1988 .
[24] Satoshi Kamiyama,et al. Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing , 1994 .
[25] H. Ohlsén,et al. Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen , 1996 .
[26] Y. Kawamoto,et al. Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs , 1995, Proceedings of International Electron Devices Meeting.
[27] G. Oehrlein. Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon , 1986 .
[28] Gottlieb S. Oehrlein,et al. Some properties of crystallized tantalum pentoxide thin films on silicon , 1984 .
[29] H. Kim,et al. The effect of substrate temperature on the composition and growth of tantalum oxide thin films deposited by plasma-enhanced chemical vapour deposition , 1991 .
[30] S. Kimura,et al. Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C , 1983 .
[31] P. Chu,et al. Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate , 1996 .
[32] R. Devine,et al. Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films , 1994 .
[33] Y. Taga,et al. Effects of additive elements on electrical properties of tantalum oxide films , 1994 .
[34] A. Revesz. The defect structure of grown silicon dioxide films , 1965 .
[35] Shigeo Fujita,et al. Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source , 1993 .
[36] T. Moriizumi,et al. Influence of Reactive Gas Pressure on the Properties of Thin Film Ta2O5 , 1987 .
[37] P. Young. dc electrical conduction in thin Ta2O5 films. I. Bulk‐limited conduction , 1976 .
[38] Optical properties of tantalum oxide films on silicon , 1976 .
[39] Y. Ohji,et al. Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric] , 1996, IEEE Electron Device Letters.
[40] Satoshi Oka,et al. Photo-Process of Tantalum Oxide Films and Their Characteristics , 1988 .
[41] K. Nomura,et al. Some properties of RF sputtered Al sub 2 O sub 3 -Ta sub 2 O sub 5 composite thin films , 1991 .
[42] J. J. Krajewski,et al. Enhancement of the dielectric constant of Ta2O5through substitution with TiO2 , 1995, Nature.
[43] Y. Ohji,et al. Stoichiometry measurement and electric characteristics of thin‐film Ta2O5 insulator for ultra‐large‐scale integration , 1993 .
[44] L. Stolt,et al. Preparation of YBa2Cu3O7−x films and YBa2Cu3O7−x/Y2O3 multilayers using coevaporation and atomic oxygen , 1993 .