Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

In this work electron-beam-induced potentials are analysed theoretically and experimentally for semiconductors. A theoretical model is developed to describe the surface potential distribution produced by an electron beam. The distribution of generated carriers is calculated using semiconductor equations. This distribution causes a local change in surface potential, which is derived with the help of quasi-Fermi energies. The potential distribution is simulated using the model developed and measured with a scanning probe microscope (SPM) built inside a scanning electron microscope (SEM), for different samples, for different beam excitations and for different cantilever voltages of SPM. In the end, some fields of application are shown where material properties can be determined using an SEM/SPM hybrid system.

[1]  Y. Rosenwaks,et al.  Measuring minority-carrier diffusion length using a Kelvin probe force microscope , 2000 .

[2]  L. Reimer.  Scanning Electron Microscopy: Physics of Image Formation and Microanalysis , 1984 .

[3]  Richard M. Swanson,et al.  Modelling of minority-carrier transport in heavily doped silicon emitters , 1987 .

[4]  Ludwig Josef Balk,et al.  A universal scanning-probe-microscope-based hybrid system , 2003 .

[5]  C. H. Wang,et al.  Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence , 1991 .

[6]  I. Wolff,et al.  A 100-femtosecond electron beam blanking system , 1990 .

[7]  H. K. Wickramasinghe,et al.  Kelvin probe force microscopy , 1991 .

[8]  U. Behnke,et al.  Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHz , 1999 .

[9]  A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM , 2003 .

[10]  J. Slinkman,et al.  Capacitive effects on quantitative dopant profiling with scanned electrostatic force microscopes , 1996 .

[11]  L. Balk,et al.  SEM/SThM-hybrid-system: a new tool for advanced thermal analysis of electronic devices , 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).

[12]  W. V. Roosbroeck,et al.  The Transport of Added Current Carriers in a Homogeneous Semiconductor , 1953 .

[13]  J. A. Schwarz,et al.  Chemisorption on a surface segregated Pt–Au alloy , 1977 .

[14]  H. Gatos,et al.  Determination of dopant‐concentration diffusion length and lifetime variations in silicon by scanning electron microscopy , 1979 .

[15]  P. Girard,et al.  ELECTROSTATIC FORCES ACTING ON THE TIP IN ATOMIC FORCE MICROSCOPY : MODELIZATION AND COMPARISON WITH ANALYTIC EXPRESSIONS , 1997 .

[16]  Ludwig Josef Balk,et al.  Nanoscopic EBIC technique in a hybrid SEM/SFM system , 1996, Proceedings of International Reliability Physics Symposium.