论文信息 - Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE

Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE

An insertion-loss-free 2×2 passive splitter/laser diode (LD) amplifier gate switch was fabricated using bandgap energy controlled selective metalorganic vapour phase epitaxy (MOVPE). The InGaAsP bulk core layers of the passive waveguides and LD amplifiers, for which the bandgap energies were different, were simultaneously grown using one-step selective MOVPE. More than 0 dB of fibre-to-fibre gain was achieved at a gate injection current of > 75 mA.

Kiichi Hamamoto | Keiro Komatsu | K. Hamamoto | K. Komatsu

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