Low-frequency noise in MoSe2 field effect transistors
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David B. Janes | D. Janes | Suprem R. Das | Saptarshi Das | A. Prakash | Jiseok Kwon | Abhijith Prakash | Saptarshi Das | C. Delker | Jiseok Kwon | Collin J. Delker
[1] R. Arita,et al. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. , 2014, Nature nanotechnology.
[2] D. Janes,et al. Low-Frequency Noise Contributions From Channel and Contacts in InAs Nanowire Transistors , 2013, IEEE Transactions on Electron Devices.
[3] Tobin J Marks,et al. Low-frequency electronic noise in single-layer MoS2 transistors. , 2013, Nano letters.
[4] J. Appenzeller,et al. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. , 2014, ACS nano.
[5] Dumitru Dumcenco,et al. Electrical transport properties of single-layer WS2. , 2014, ACS nano.
[6] H. Wen,et al. Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts. , 2013, Nano letters.
[7] Lain-Jong Li,et al. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. , 2014, ACS nano.
[8] Wang Yao,et al. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.
[9] A. Offenhäusser,et al. Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques , 2013 .
[10] D. B. Janes,et al. 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors , 2012, IEEE Transactions on Electron Devices.
[11] 1/ f Noise in MoS 2 Field Effect Transistors with Various Layer Thicknesses , 2014 .
[12] Xu Du,et al. Mobility-dependent low-frequency noise in graphene field-effect transistors. , 2011, ACS nano.
[13] Kinam Kim,et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.
[14] E. Lind,et al. Low-Frequency Noise in Vertical InAs Nanowire FETs , 2010, IEEE Electron Device Letters.
[15] J. Appenzeller,et al. Screening and interlayer coupling in multilayer MoS2 , 2013 .
[16] L. Chu,et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.
[17] Phaedon Avouris,et al. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes. , 2006, Nano letters.
[18] Aaron M. Jones,et al. Electrical control of neutral and charged excitons in a monolayer semiconductor , 2012, Nature Communications.
[19] Wei Liu,et al. Low-frequency noise in bilayer MoS(2) transistor. , 2014, ACS nano.
[20] Cor Claeys,et al. On the flicker noise in submicron silicon MOSFETs , 1999 .
[21] Masa Ishigami,et al. Hooge’s constant for carbon nanotube field effect transistors , 2006 .
[22] Sefaattin Tongay,et al. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. , 2012, Nano letters.
[23] C. Grigoropoulos,et al. Analysis of flicker noise in two-dimensional multilayer MoS2 transistors , 2014 .
[24] Spin-orbit proximity effect in graphene. , 2014, Nature communications.
[25] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[26] Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. , 2014, Nature nanotechnology.
[27] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[28] Low-noise top-gate graphene transistors , 2009, 0908.3304.
[29] A. Javey,et al. High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.
[30] E. Tutuc,et al. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers , 2012 .