论文信息 - 15 GBPS MUX/DMUX implemented with AlGaAs/GaAs HBTs

15 GBPS MUX/DMUX implemented with AlGaAs/GaAs HBTs

AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with improved high-speed performance obtained by a self-alignment technology and a new layer design have been used to construct ultra-high-speed MUX (multiplexer) and DMUX (demultiplexer) ICs. Quantitative error-free operation of these ICs was confirmed up to 10 Gb/s. Although only a few test patterns were available, the maximum operation speeds of the MUX and the DMUX were found to be around 15 Gb/s and 19 Gb/s, respectively. These results demonstrate the promising potential of HBTs for coming ultra-high-speed digital systems.<<ETX>>

[1] Noriaki Yoshikai,et al. Monolithic integrated 4:1 multiplexer and demultiplexer operating up to 4.8 Gbit/s , 1985 .

[2] N. Iizuka,et al. Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region , 1988, IEEE Electron Device Letters.

[3] Osaake Nakajima,et al. 22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTs , 1987 .

[4] K. Tanaka,et al. An ultra-high speed GaAs DCFL flip-flop-MCFF (memory cell type flip flop) , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[5] M. Asaka,et al. AlGaAs/GaAs HBTs fabricated by a self-alignment technology using polyimide for electrode separation , 1988, IEEE Electron Device Letters.

[6] P. M. Asbeck,et al. HIGH-SPEED CIRCUITS FOR LIGHTWAVE COMMUNICATION SYSTEMS IMPLEMENTED WITH (ALGA)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS. , 1987 .