论文信息 - GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.

G. I. Haddad | Heribert Eisele | G. Haddad | H. Eisele

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