Load Pull Characterization of GaN/AlGaN HEMTs

This work presents a large signal characterization of a high power GaN/AlGaN HEMT transistor utilizing a harmonic load pull setup. Two different methods for passive automated tuners have been compared to synthesize the load impedances

[1]  P. Pramanick,et al.  A Generalized Theory of Tapered Transmission Line Matching Transformers and Asymmetric 180° Couplers Supporting Non-TEM Modes , 1987, 1987 IEEE MTT-S International Microwave Symposium Digest.

[2]  Gottfried Magerl,et al.  A novel low loss microwave multiplexer design based on directional filters , 2002, Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573).

[3]  T. Kikkawa.  Recent progress and future prospects of GaN HEMTs for base-station applications , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[4]  W. De Raedt,et al.  Microwave applications of advanced semiconductor technologies , 2004, 34th European Microwave Conference, 2004..