Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf ( mp ) 4

Hafnium 3-methyl-3-pentoxide precursor, Hf(mp) 4 , was newly synthesized as an alkoxide precursor and used to deposit HfO 2 films by remote plasma atomic layer deposition (ALD). The characteristics of the HfO 2 films were compared with the films deposited using tetrakis(diethylamido)hafnium [Hf(NEt 2 ) 4 ] which is used frequently for ALD processes. The HfO 2 films deposited with the Hf(mp) 4 had a well-controlled rate of deposition at low temperatures and maintained a low amount of carbon contamination. In addition, the HfO 2 films deposited by using Hf(mp) 4 exhibited a higher phase transition temperature and lower leakage current densities than those of HfO 2 films deposited using Hf(NEt 2 ) 4 .

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