论文信息 - Modelling of threshold voltage with non-uniform substrate doping [MOSFET]

Modelling of threshold voltage with non-uniform substrate doping [MOSFET]

A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.

K. Y. Lim | X. Zhou

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