论文信息 - Preparation of p-type GaAs layers for ohmic contact - 字舞流文

Preparation of p-type GaAs layers for ohmic contact

P. Machac | J. Nahlik

[1] Hadis Morkoç,et al. Recent developments in ohmic contacts for III-V compound semiconductors , 1992 .

[2] A. Chin,et al. Zinc diffusion in III-V semiconductors using a cubic-zirconia protection layer , 1990 .

[3] K. Kahen. Model for the diffusion of zinc in gallium arsenide , 1989 .

[4] A. Choudhury,et al. A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs , 1987 .

[5] M. Amann,et al. Improved shallow p+ diffusion into InGaAsP by a new spin‐on diffusion source , 1987 .

[6] R. Roedel,et al. Use of a sputtered SiO2 coating for surface protection during 'leaky tube' diffusion of Zn into GaAs , 1983 .

[7] G. A. Vawter,et al. Open tube diffusion of Zn into AlGaAs and GaAs , 1983 .

[8] M. Small,et al. Shallow zinc diffusion in liquid phase epitaxial GaAs and (GaAl)As at 600 °C , 1983 .

[9] J. Shealy,et al. Open tube diffusion of zinc in gallium arsenide , 1980, IEEE Electron Device Letters.