Growth of HgCdTe films by laser induced evaporation and deposition
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Hg1−xCdxTe, the evaporation is congruent. Films were deposited at different substrate temperatures in a Hg partial pressure. The as‐deposited films were stoichiometric and exhibit a strong 〈111〉 texture. As‐grown films are n‐type with electron mobility as high as 2×104 cm2/V‐s at 77 K.