Optical, electrical and mechanical properties of nitrogen-rich carbon nitride films deposited by inductively coupled plasma chemical vapor deposition

An inductively coupled plasma utilizing chemical transport reactions has been used to deposit thin carbon nitride films with a high nitrogen content [N/(C+N) of approximately 0.5 or higher]. We report on the characterization of the application relevant properties of these films, especially the optical (refractive index, transmission), electrical (dielectric constant, resistivity) and mechanical characteristics (stress, hardness, wear resistance). The refractive index is in the order of 1.5–1.8 depending on the deposition conditions; furthermore, the films are highly transmitting for wavelengths above 600 nm. C–V curves indicate the insulating character of the CNx films which was confirmed by I–V measurements yielding resistivities up to 1011 Ω cm at room temperature. The layers possess marginal stress as measured by the bending method on silicon cantilevers. The hardness is in the range of 1 GPa, and a friction coefficient of 0.6 was determined by ball-on-disc tests against stainless steel balls. The investigations showed that these films may be suited especially for optical and electrical applications. Finally, we correlate the films characteristics with the composition and structure of the coatings.

[1]  T. Chong,et al.  Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition , 1999 .

[2]  D. R. Waterman,et al.  Amorphous nitrogen containing carbon films deposited by plasma assisted chemical vapour deposition , 1999 .

[3]  J. Robertson,et al.  Nitrogen Incorporation into Tetrahedral Hydrogenated Amorphous Carbon , 1999 .

[4]  M. Jelínek,et al.  Application-relevant characterization of magnetron-sputtered carbon nitride films , 1999 .

[5]  A. Bensaoula,et al.  Physical properties of thin carbon nitride films deposited by electron cyclotron resonance assisted vapor deposition , 1995 .

[6]  G. Amaratunga,et al.  Nitrogen modification of hydrogenated amorphous carbon films , 1997 .

[7]  C. Lieber,et al.  Diamondlike properties in a single phase carbon nitride solid , 1996 .

[8]  H. Baik,et al.  Silicide formation in cobalt/amorphous silicon, amorphous CoSi and bias-induced CoSi films , 1997 .

[9]  R. G. Downing,et al.  Conduction processes in boron- and nitrogen-doped diamond-like carbon films prepared by mass-separated ion beam deposition , 1995 .

[10]  J. Levoska,et al.  Tribological characterization of carbon-nitrogen coatings deposited by using vacuum arc discharge , 1996 .

[11]  M. Jelínek,et al.  Capacitance humidity sensor with carbon nitride detecting element , 2000 .

[12]  W. Nix,et al.  Interpretation of x-ray photoelectron spectra of elastic amorphous carbon nitride thin films , 1999 .

[13]  E. Broitman,et al.  Role of nitrogen in the formation of hard and elastic CN x thin films by reactive magnetron sputtering , 1999 .

[14]  Xi Wang,et al.  Optical and mechanical properties of carbon nitride films prepared by ion-assisted arc deposition and magnetron sputtering , 1995 .

[15]  C. Cardinaud,et al.  Spectroscopic determination of the structure of amorphous nitrogenated carbon films , 1998 .

[16]  A. Czyżniewski,et al.  Structure, composition and tribological properties of carbon nitride films , 1998 .

[17]  L. Jastrabík,et al.  The influence of deposition conditions on the growth and mechanical properties of CNxHy films obtained by ECR plasma-activated CVD , 1998 .

[18]  P. Y. Yu,et al.  Fundamentals of Semiconductors , 1995 .

[19]  I. Rangelow,et al.  Gas‐Sensitive Properties of Nitrogen‐Rich Carbon Nitride Films , 2000 .

[20]  F. Freire,et al.  Influence of precursor gases on the structure of plasma deposited amorphous hydrogenated carbon–nitrogen films , 1996 .

[21]  T. Itoh,et al.  Structural and electronic properties of highly photoconductive amorphous carbon nitride , 1999 .

[22]  C. Popov,et al.  Low‐Pressure CVD of Carbon Nitride Using Triazine‐Containing Precursors , 1999 .

[23]  D. A. Dunnett.  Classical Electrodynamics , 2020, Nature.

[24]  F. Freire,et al.  Structure and mechanical properties of hard amorphous carbon-nitrogen films obtained by plasma decomposition of methane-ammonia mixtures , 1997 .

[25]  Jerome J. Cuomo,et al.  Reactive sputtering of carbon and carbide targets in nitrogen , 1979 .

[26]  C. Lenardi,et al.  Synthesis of carbon nitride films at low temperatures , 1997 .

[27]  Bernard J. Feldman,et al.  Structural and optical properties of amorphous carbon nitride , 1988 .

[28]  C. Popov,et al.  Synthesis of carbon nitride films by low-power inductively coupled plasma-activated transport reactions from a solid carbon source , 1999 .

[29]  J. Angus,et al.  Dense ‘‘diamondlike’’ hydrocarbons as random covalent networks , 1988 .

[30]  M. Kuhn,et al.  Preparation of CNx films by ion beam assisted filtered cathodic arc deposition , 1997 .

[31]  Brown,et al.  Nitrogen doping of highly tetrahedral amorphous carbon. , 1993, Physical review. B, Condensed matter.

[32]  C. Lenardi,et al.  Low-temperature sputter deposition and characterisation of carbon nitride films , 1997 .

[33]  P. Martin,et al.  Optical behavior of alpha‐C:N films , 1996 .

[34]  van de Mcm Richard Sanden,et al.  Characterization of carbon nitride thin films deposited by a combined RF and DC plasma beam , 1998 .

[35]  S. Mitura,et al.  Nanocrystalline C=N thin films , 1996 .