Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.

[1]  G. D. Parfitt,et al.  Surface Science , 1965, Nature.

[2]  G. Mahan,et al.  Electron Scattering from Surface Excitations , 1972 .

[3]  Pierre F. Maldague,et al.  Many-body corrections to the polarizability of the two-dimensional electron gas , 1978 .

[4]  A. Saidane.  The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95 , 2000 .

[5]  E. Cartier,et al.  Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .

[6]  Eric Pop,et al.  Negative differential conductance and hot phonons in suspended nanotube molecular wires. , 2005, Physical review letters.

[7]  L. Vandersypen,et al.  Gate-induced insulating state in bilayer graphene devices. , 2007, Nature materials.

[8]  E. H. Hwang,et al.  Screening-induced temperature-dependent transport in two-dimensional graphene , 2008, 0811.1212.

[9]  X. Hong,et al.  Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering. , 2009, Physical review letters.

[10]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[11]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[12]  Lianmao Peng,et al.  A high-performance top-gate graphene field-effect transistor based frequency doubler , 2010 .

[13]  Jing Guo,et al.  Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors , 2011, IEEE Transactions on Electron Devices.

[14]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[15]  Wang Yao,et al.  Valley polarization in MoS2 monolayers by optical pumping. , 2012, Nature nanotechnology.

[16]  K. Jacobsen,et al.  Phonon-limited mobility inn-type single-layer MoS2from first principles , 2012 .

[17]  Wang Yao,et al.  Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.

[18]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[19]  Pablo Jarillo-Herrero,et al.  Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. , 2013, Nano letters.

[20]  M. Fischetti,et al.  Mobility enhancement and temperature dependence in top-gated single-layer MoS2 , 2013, 1409.1084.

[21]  Mengwei Si,et al.  Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. , 2013, Nano letters.

[22]  Xiaodong Li,et al.  Intrinsic electrical transport properties of monolayer silicene and MoS 2 from first principles , 2013, 1301.7709.

[23]  F. Miao,et al.  Hopping transport through defect-induced localized states in molybdenum disulphide , 2013, Nature Communications.

[24]  Madan Dubey,et al.  Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition , 2013 .

[25]  B. Radisavljevic,et al.  Mobility engineering and a metal-insulator transition in monolayer MoS₂. , 2013, Nature materials.

[26]  Aaron M. Jones,et al.  Optical generation of excitonic valley coherence in monolayer WSe2. , 2013, Nature nanotechnology.

[27]  K. L. Shepard,et al.  One-Dimensional Electrical Contact to a Two-Dimensional Material , 2013, Science.

[28]  X. Duan,et al.  Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. , 2013, Nature nanotechnology.

[29]  Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. , 2014, Nature communications.

[30]  Giuseppe Iannaccone,et al.  Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.

[31]  Rajeev Kumar,et al.  Transport properties of monolayer MoS2 grown by chemical vapor deposition. , 2014, Nano letters.

[32]  Aaron M. Jones,et al.  Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. , 2013, Nature nanotechnology.

[33]  P. Avouris,et al.  Photodetectors based on graphene, other two-dimensional materials and hybrid systems. , 2014, Nature nanotechnology.

[34]  Hao Wu,et al.  Toward barrier free contact to molybdenum disulfide using graphene electrodes. , 2015, Nano letters.

[35]  Lei Wang,et al.  Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. , 2015, Nature nanotechnology.

[36]  Andras Kis,et al.  Single-layer MoS2 electronics. , 2015, Accounts of chemical research.

[37]  Zhihao Yu,et al.  High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics , 2015, Advanced materials.