IGBT物理モデルの負荷短絡保護回路への適用;IGBT物理モデルの負荷短絡保護回路への適用;An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions

[1]  E. Santi,et al.  Physical modeling of forward conduction in IGBTs and diodes , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[2]  A. Hefner,et al.  The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) , 1986, IEEE Transactions on Nuclear Science.

[3]  Jerry L. Hudgins,et al.  Circuit simulator models for the diode and IGBT with full temperature dependent features , 2003 .

[4]  G. Belverde,et al.  A new gate circuit performing fault protections of IGBTs during short circuit transients , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[5]  Ichiro Omura,et al.  Ultra high speed short circuit protection for IGBT with gate charge sensing , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[6]  Xiaosong Kang,et al.  Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models , 2006, IEEE Transactions on Power Electronics.

[7]  Ichiro Omura,et al.  Full digital short circuit protection for advanced IGBTs , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[8]  Kouki Matsuse,et al.  Study on Gate-Controlled Protection Methods for IGBTs Under A Short-Circuit Condition , 2007 .