论文信息 - A general four-terminal charging-current model for the insulated-gate field-effect transistor—I

A general four-terminal charging-current model for the insulated-gate field-effect transistor—I

Abstract A general form of equivalent circuit model for the IGFET is presented in which a complete representation is given of the charging currents in the device. At the heart of the model is the essential step of “partitioning” the channel charging current between the source and drain terminals. This is carried out in terms of the distinct physical mechanisms associated with the charging of the device via the gate and substrate terminals respectively. The circuit elements of the model are all defined on a quasi-static (charge control) basis by the relationships between the charges stored in the IGFET and the voltages applied to its four terminals.

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