Midinfrared intersubband absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures

The authors report the observation of intersubband absorption in ZnxCd(1−x)Se∕Znx′Cdy′Mg(1−x′−y′)Se multiple quantum wells. Lattice-matched samples were grown by molecular beam epitaxy on InP (001) substrates. Photoluminescence measurements indicate that the samples have excellent material quality. The peak absorption wavelengths measured by Fourier transform infrared spectroscopy are 3.99 and 5.35μm for two samples with ZnxCd(1−x)Se well widths of 28 and 42A, respectively. These values fall within the 3–5μm wavelength range, which is of interest for midinfrared intersubband devices, such as quantum cascade lasers and quantum well infrared photodetectors. Their experimental results fit well with theoretical predictions based on the envelope function approximation. The results indicate that these wide band gap II-VI materials are very promising for midinfrared intersubband device applications.

[1]  Hong Lu,et al.  Optical characterization and evaluation of the conduction band offset for ZnCdSe∕ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy , 2005 .

[2]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[3]  Francois H. Julien,et al.  Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength , 2006 .

[4]  Ryoichi Akimoto,et al.  Subpicosecond saturation of intersubband absorption in (CdS∕ZnSe)∕BeTe quantum-well waveguides at telecommunication wavelength , 2005 .

[5]  Dmitry G. Revin,et al.  InGaAs∕AlAsSb quantum cascade lasers , 2004 .

[6]  Hong Lu,et al.  Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se , 2003 .

[7]  Manijeh Razeghi,et al.  High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers , 2004 .

[8]  F. Capasso,et al.  Recent progress in quantum cascade lasers and applications , 2001 .

[9]  Federico Capasso,et al.  Far-infrared surface-plasmon quantum-cascade lasers at 21.5 μm and 24 μm wavelengths , 2001 .

[10]  L. Zeng,et al.  Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP , 1998 .

[11]  Claire F. Gmachl,et al.  Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers , 2000 .

[12]  Katsumi Kishino,et al.  Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm , 2002 .

[13]  Xavier Marcadet,et al.  Room temperature operation of InAs/AlSb quantum cascade lasers , 2004 .

[14]  T. Hasama,et al.  Intersubband Transition Based on a Novel II-VI Quantum Well Structure for Ultrafast All-Optical Switching , 2004 .

[15]  M. Tamargo,et al.  Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates , 2000 .

[16]  Carlo Sirtori,et al.  Short wavelength ( 3:4 m) quantum cascade laser based on strain-compensated InGaAs/AllnAs , 1998 .

[17]  M. Tamargo.  II-VI Semiconductor Materials and their Applications , 2002 .

[18]  Kei Kaneko,et al.  Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy , 2002 .

[19]  L. Zeng,et al.  Photo-pumped ZnCdSe/ZnCdMgSe blue-green quantum well lasers grown on InP substrates , 1997 .

[20]  Wolfgang Bronner,et al.  GaInAs∕AlAsSb quantum-cascade lasers operating up to 400K , 2005 .

[21]  Claire F. Gmachl,et al.  Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm , 2000 .

[22]  Manijeh Razeghi,et al.  Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm , 2006 .