Evaluation results of the novel reticle pattern defect inspection system for 1-Gb device

Reticle pattern defect inspection systems for 1 giga-bit DRAM devices are required to have a defect detection sensitivity of 0.1 micrometer, and a stage of 9-inch. This requires these systems to process the data used for database inspection at high speeds. The currently used reticle pattern defect inspection systems require a longer time to inspect reticle as the defect inspection sensitivity or the amount of pattern data is increased. Performing reticle pattern defect inspection in a short delivery time is often required. Therefore, inspection systems must achieve high sensitivity and high throughput. Reticle writing systems promote high throughput by multi-beams. Currently we have found no breakthroughs in high throughput of inspection processes and recently inspection time is longer than the pattern writing time. the throughput of inspection process has become a serious challenge. As the high-density packaging of semiconductor devices advances, the size of reticle patterns has become sub-micron feature. As a result, reticle pattern defect inspection systems are required to recognize fine patterns and detect below 0.2 micrometer defects. Specifically in database inspection, false defect detection caused by shape mismatching between reticle and inspection pattern data has become a serious problem. To solve these problems, a novel reticle pattern defect inspection system (8MD93R) has been developed by using a new technique.