Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors
暂无分享，去创建一个
The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.
[1] D.A.B. Miller,et al. Rationale and challenges for optical interconnects to electronic chips , 2000, Proceedings of the IEEE.
[2] C. Glingener,et al. Efficient optical coupling between a polymeric waveguide and an ultrafast silicon MSM photodiode , 1998 .
[3] Ray T. Chen,et al. Fully embedded board-level guided-wave optoelectronic interconnects , 2000, Proceedings of the IEEE.
[4] O. Vendier,et al. Thin-film inverted MSM photodetectors , 1996, IEEE Photonics Technology Letters.