论文信息 - A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5- mu m transistors subjected to process-induced damage - 字舞流文

A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5- mu m transistors subjected to process-induced damage

H. Tseng | J. Hayden | P. Tobin | Ko-Min Chang | J. Miller