Power dissipation in capacitively coupled rf discharges

The power dissipation in capacitively coupled rf discharges (Ar, 400 Pa) has been studied by impedance measurements in the 10–50 MHz frequency range. The article focuses on electrodeless discharge configurations in which the field‐supplying electrodes are separated from the discharge volume by a dielectric wall, but the study of a classical electroded rf discharge is also included for comparison. The power share between bulk plasma and sheath regions is determined quantitatively using an equivalent circuit model which reflects the discharge structure. It depends strongly on both rf discharge current and frequency. For the electrodeless discharge configurations and equally for the electroded one, the fraction of power dissipated in the sheaths generally increases with increasing current and decreasing frequency. The sheath thickness derived from the impedance measurements decreases with frequency. It is nearly independent of the current for the electrodeless discharge configurations, but decreases with inc...

[1]  M. Moisan,et al.  Electrostatic probe analysis of microwave plasmas used for polymer etching , 1987 .

[2]  William B. Pennebaker,et al.  Electrical properties of RF sputtering systems , 1979 .

[3]  Michael T. Mocella,et al.  The Plasma Etching of Polysilicon with CF 3Cl / Argon Discharges I . Parametric Modeling and Impedance Analysis , 1986 .

[4]  L. Frost.  Effect of Variable Ionic Mobility on Ambipolar Diffusion , 1957 .

[5]  J. Boeuf,et al.  Numerical model of rf glow discharges. , 1987, Physical review. A, General physics.

[6]  J. Loureiro,et al.  Characteristics of high-frequency and direct-current argon discharges at low pressures: a comparative analysis , 1984 .

[7]  Michael A. Lieberman,et al.  Analytical solution for capacitive RF sheath , 1988 .

[8]  K. Riemann.  Theoretical analysis of the electrode sheath in rf discharges , 1989 .

[9]  M. Elta,et al.  Large‐signal time‐domain modeling of low‐pressure rf glow discharges , 1987 .

[10]  C. Horwitz.  Rf sputtering–voltage division between two electrodes , 1983 .

[11]  A. Roosmalen,et al.  Electrical properties of planar rf discharges for dry etching , 1985 .

[12]  Valery Godyak,et al.  Soviet radio frequency discharge research , 1986 .

[13]  A. Roosmalen,et al.  Plasma parameter estimation from rf impedance measurements in a dry etching system , 1983 .

[14]  R. Warren.  Interpretation of Field Measurements in the Cathode Region of Glow Discharges , 1955 .

[15]  Sanborn C. Brown,et al.  Basic Data of Plasma Physics , 1961 .

[16]  P. Bletzinger,et al.  Impedance characteristics of an rf parallel plate discharge and the validity of a simple circuit model , 1987 .

[17]  L. Maissel,et al.  Application of RF discharges to sputtering , 1970 .

[18]  D. E. Gray,et al.  American Institute of Physics Handbook , 1957 .

[19]  M. Kushner.  Mechanisms for Power Deposition in Ar/SiH4 Capacitively Coupled RF Discharges , 1986, IEEE Transactions on Plasma Science.

[20]  M. Hayashi.  Recommended values of transport cross sections for elastic collision and total collision cross section of electrons in atomic and molecular gases , 1981 .

[21]  M. Lieberman.  Spherical shell model of an asymmetric rf discharge , 1989 .

[22]  W. B. Pennebaker.  Influence of scattering and ionization on RF impedance in glow discharge sheaths , 1979 .

[23]  S. Biehler.  Theory of the rf sheath in the regime between the ion and electron plasma frequencies , 1989 .

[24]  K. T. Compton,et al.  Theory of Normal Cathode Fall in Glow Discharges , 1927 .

[25]  K. Jensen,et al.  A Continuum Model of DC and RF Discharges , 1986, IEEE Transactions on Plasma Science.

[26]  J. Coburn,et al.  Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system , 1985 .

[27]  V. Godyak,et al.  Power dissipated in low‐pressure radio‐frequency discharge plasmas , 1985 .