Novel attributes in scaling issues of carbon nanotube field-effect transistors

For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, I"o"n/I"o"f"f ratio, subthreshold swing and drain-induced barrier lowering (DIBL) with different gate oxide thicknesses and carbon nanotube (CNT) diameters. We concluded that the I"o"n/I"o"f"f ratio increases with the gate oxide thickness reduction and increase in the CNT diameter and lead to a high on-state current. Furthermore, leakage current reduces with decrease in the gate oxide thickness, but it becomes higher in CNTFETs with larger CNT diameter. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier improve in CNTFETs with thinner gate oxide and larger CNT diameter. In addition, the investigation of short channel effects shows that CNTFETs with thinner gate oxide offer lower DIBL and subthreshold swing, but in the CNTFETs with larger CNT diameter DIBL and subthreshold swing become worse.

[1]  P. McEuen,et al.  Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes , 2003, cond-mat/0309641.

[2]  S. Luryi.  Quantum capacitance devices , 1988 .

[3]  Performance of carbon nanotube field effect transistors with doped source and drain extensions and arbitrary geometry , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[4]  Xing Zhou,et al.  A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling , 1999 .

[5]  Mark S. Lundstrom,et al.  Theory of ballistic nanotransistors , 2003 .

[6]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[7]  S. Wind,et al.  Lateral scaling in carbon-nanotube field-effect transistors. , 2003, Physical review letters.

[8]  T. Stöferle,et al.  Energy transfer in hybrid organic/inorganic nanocomposites , 2009, NanoScience + Engineering.

[9]  M. Lundstrom,et al.  Ballistic carbon nanotube field-effect transistors , 2003, Nature.

[10]  J. Hafner,et al.  Fabry - Perot interference in a nanotube electron waveguide , 2001, Nature.

[11]  C. Dekker,et al.  Logic Circuits with Carbon Nanotube Transistors , 2001, Science.

[12]  M. Dresselhaus,et al.  Physical properties of carbon nanotubes , 1998 .

[13]  S. Datta.  Quantum Transport: Atom to Transistor , 2004 .

[14]  R Martel,et al.  Carbon nanotubes as schottky barrier transistors. , 2002, Physical review letters.

[15]  P. Avouris,et al.  Self-aligned carbon nanotube transistors with charge transfer doping , 2005, cond-mat/0511039.

[16]  P. Avouris,et al.  Carbon Nanotube Inter- and Intramolecular Logic Gates , 2001 .

[17]  Ali A. Orouji,et al.  Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics , 2008 .

[18]  S. Datta,et al.  Performance projections for ballistic carbon nanotube field-effect transistors , 2002 .

[19]  M. Fuhrer,et al.  Extraordinary Mobility in Semiconducting Carbon Nanotubes , 2004 .

[20]  Leonard,et al.  Negative differential resistance in nanotube devices , 2000, Physical review letters.

[21]  H. Wong,et al.  Carbon nanotube field effect transistors for logic applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[22]  R. R. Troutman,et al.  VLSI limitations from drain-induced barrier lowering , 1979 .