论文信息 - A physically-based analytical model for a-Si devices including drift and diffusion currents

A physically-based analytical model for a-Si devices including drift and diffusion currents

A new compact model for a-Si TFTs is proposed. The model is physically based as the relation between the surface and the quasi-Fermi potentials is correctly accounted for, and therefore implicitly accounts for both linear and saturation operating conditions. Among other consequences, the explicit definition of the threshold and saturation voltages as input parameters is not needed.

M. Rudan | L. Colalongo | M. Valdinoci

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