SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior
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Sorin Cristoloveanu | Jing Wan | Cyrille Le Royer | Alexander Zaslavsky | A. Zaslavsky | S. Cristoloveanu | J. Wan | C. Le Royer
[1] K. Akarvardar,et al. Low-frequency noise in SOI four-gate transistors , 2006, IEEE Transactions on Electron Devices.
[2] Qin Zhang,et al. Can the Interband Tunnel FET Outperform Si CMOS? , 2008, 2008 Device Research Conference.
[3] Gérard Ghibaudo,et al. Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..
[4] G. Amaratunga,et al. Silicon surface tunnel transistor , 1995 .
[5] F. Andrieu,et al. Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance , 2008, 2008 IEEE International Electron Devices Meeting.
[6] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[7] Byung-Gook Park,et al. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.
[8] Sorin Cristoloveanu,et al. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator , 2009 .
[9] K. Saraswat,et al. Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope , 2008, 2008 IEEE International Electron Devices Meeting.
[10] J.C.S. Woo,et al. The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor , 2008, IEEE Transactions on Electron Devices.
[11] S. Luryi,et al. Lateral interband tunneling transistor in silicon-on-insulator , 2004 .
[12] I. Eisele,et al. A simulation approach to optimize the electrical parameters of a vertical tunnel FET , 2005, IEEE Transactions on Electron Devices.
[13] K. Maex,et al. Tunnel field-effect transistor without gate-drain overlap , 2007 .
[14] K. Banerjee,et al. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits , 2009, IEEE Transactions on Electron Devices.