Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Power dissipation has become a major obstacle in performance scaling of modern integrated circuits and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors taking semiconducting carbon nanotubes as the channel material. The on current of these devices is mainly limited by the tunneling barrier properties, and phonon-scattering has only a moderate effect. We show, however, that the off current is limited by phonon absorption assisted tunneling, and thus is strongly temperature dependent. Subthreshold swings below the 60mV∕decade conventional limit can be readily achieved even at room temperature. Interestingly, although subthreshold swing degrades due to the effects of phonon scattering, it remains low under practical biasing conditions.

[1]  Ali Javey,et al.  Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/decade and Sub-60 mV/decade Tunnel Transistors , 2006, 2006 International Electron Devices Meeting.

[2]  S. Datta.  Quantum Transport: Atom to Transistor , 2004 .

[3]  J. Appenzeller,et al.  Band-to-band tunneling in carbon nanotube field-effect transistors. , 2004, Physical review letters.

[4]  Qin Zhang,et al.  Low-subthreshold-swing tunnel transistors , 2006, IEEE Electron Device Letters.

[5]  D. Schmitt-Landsiedel,et al.  The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[6]  Mark S. Lundstrom,et al.  Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling. , 2007, Nano letters.

[7]  W. Hansch,et al.  A vertical MOS-gated Esaki tunneling transistor in silicon , 2000 .

[8]  T. Baba.  Proposal for Surface Tunnel Transistors , 1992 .

[9]  S. Luryi,et al.  Lateral interband tunneling transistor in silicon-on-insulator , 2004 .

[10]  Jing Guo,et al.  A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors , 2005 .

[11]  Paul R. Berger,et al.  Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts , 2001 .

[12]  G. Amaratunga,et al.  Silicon surface tunnel transistor , 1995 .

[13]  T. Baba,et al.  First demonstration of a planar-type surface tunnel transistor (STT): Lateral interband tunnel device , 1996 .

[14]  M. Lundstrom,et al.  Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors , 2007, IEEE Transactions on Electron Devices.

[15]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[16]  Yoshio Nishi,et al.  DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. , 2006, Journal of the American Chemical Society.

[17]  M. Anantram,et al.  Two-dimensional quantum mechanical modeling of nanotransistors , 2001, cond-mat/0111290.

[18]  Mark Lundstrom,et al.  Simulation of Carbon Nanotube FETs Including Hot-Phonon and Self-Heating Effects , 2007 .

[19]  Byung-Gook Park,et al.  Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance , 2005 .

[20]  M. Lundstrom,et al.  Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays , 2004, cond-mat/0406494.

[21]  Walter Hansch,et al.  Phonon assisted tunneling in gated p-i-n diodes , 2002 .

[22]  E. Conwell.  Band transport in quasi-one-dimensional conductors in the phonon-scattering regime and application to tetrathiofulvalene-tetracyanoquinodimethane , 1980 .

[23]  Akira Toriumi,et al.  Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device , 1997 .

[24]  K. Maex,et al.  Tunnel field-effect transistor without gate-drain overlap , 2007 .

[25]  S. Datta,et al.  Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches , 2002 .

[26]  M. Ferenets,et al.  Thin Solid Films , 2010 .

[27]  I. Eisele,et al.  Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering , 2005, IEEE Transactions on Electron Devices.

[28]  Mark S. Lundstrom,et al.  Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors , 2005, cond-mat/0510122.

[29]  Siegfried Selberherr,et al.  Rigorous modeling of carbon nanotube transistors , 2006 .

[30]  M. P. Anantram,et al.  Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias , 2005, cond-mat/0511723.

[31]  M. Lundstrom,et al.  Computational study of carbon nanotube p-i-n tunnel FETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[32]  W. Richardson,et al.  A new three-terminal tunnel device , 1987, IEEE Electron Device Letters.

[33]  J. Appenzeller,et al.  Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design , 2005, IEEE Transactions on Electron Devices.

[34]  J. Knoch,et al.  Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices , 2007 .