Total ionizing dose sensitivity of function blocks in FRAM

Abstract The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection. The ferroelectric memory array is proved to have higher resistance to TID than the peripheral control circuitry, whereas the sense amplifier is the most sensitive parts in the FRAM circuitry. The failure phenomenon is studied when each function block is irradiated, and the failure mechanism is discussed based on each block’s technological and circuital characteristics. In addition, the Co-60 γ ray irradiation test is also performed to offer a comparison of the spot and global irradiation.

[1]  A. Cester,et al.  Ionizing Radiation Effect on Ferroelectric Nonvolatile Memories and Its Dependence on the Irradiation Temperature , 2008, IEEE Transactions on Nuclear Science.

[2]  Daisaburo Takashima,et al.  Overview of FeRAMs: Trends and perspectives , 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.

[3]  O. Musseau,et al.  A study of radiation vulnerability of ferroelectric material and devices , 1994 .

[4]  J.A. Felix,et al.  Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.

[5]  J. M. Benedetto,et al.  Single event upset immunity of strontium bismuth tantalate ferroelectric memories , 1999 .

[6]  Randall A Moore,et al.  The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors , 1990 .

[7]  G. C. Messenger,et al.  Ferroelectric memories: a possible answer to the hardened nonvolatile question , 1988 .

[8]  Marty R. Shaneyfelt,et al.  Comparison of charge yield in MOS devices for different radiation sources , 2002 .

[9]  K. Remack,et al.  Reliability properties of low-voltage ferroelectric capacitors and memory arrays , 2004, IEEE Transactions on Device and Materials Reliability.

[10]  Daniel M. Fleetwood,et al.  Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices , 1991 .

[11]  Ashok Sharma.  Semiconductor Memory Radiation Effects , 1997 .

[12]  J. Rodriguez,et al.  Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology , 2013, 2013 5th IEEE International Memory Workshop.

[13]  Dunbar P. Birnie,et al.  Total-dose radiation effects on sol-gel derived PZT thin films , 1992 .

[14]  L. Scheick,et al.  TID testing of ferroelectric nonvolatile RAM , 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

[15]  P. S. Winokur,et al.  Accounting for Dose-Enhancement Effects with CMOS Transistors , 1985, IEEE Transactions on Nuclear Science.

[16]  P. V. Dressendorfer,et al.  Total-dose radiation-induced degradation of thin film ferroelectric capacitors , 1990 .

[17]  J. A. Modolo,et al.  Radiation Effects in MOS Capacitors with Very Thin Oxides at 80°K , 1984, IEEE Transactions on Nuclear Science.

[18]  D.A. Kamp,et al.  A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory , 2007, 2007 Non-Volatile Memory Technology Symposium.

[19]  Fat D. Ho,et al.  Radiation-Hardened Electronics and Ferroelectric Memory for Space Flight Systems , 2011 .

[20]  Anantha Chandrakasan,et al.  A 3.4pJ FeRAM-enabled D flip-flop in 0.13µm CMOS for nonvolatile processing in digital systems , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[21]  S.Y. Kim,et al.  A Highly Reliable FRAM (Ferroelectric Random Access Memory) , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[22]  W. Haller,et al.  Effects of ionizing radiation on thin‐oxide (20–1500 Å) MOS capacitors , 1974 .

[23]  M. Brassington,et al.  Radiation evaluation of commercial ferroelectric nonvolatile memories , 1991 .

[24]  Y. Chung.  Experimental 128-kbit ferroelectric memory with 10/sup 12/ endurance and 10-year data retention , 2002 .

[25]  Tohru Ozaki,et al.  A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell , 2011, IEEE Journal of Solid-State Circuits.

[26]  J. M. Benedetto,et al.  Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elements , 1993 .

[27]  Wei Chen,et al.  Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation , 2014, IEEE Transactions on Nuclear Science.

[28]  James F. Scott,et al.  Radiation effects on ferroelectric thin‐film memories: Retention failure mechanisms , 1989 .

[29]  Fat D. Ho,et al.  Satellite test of radiation impact on Ramtron 512K FRAM , 2009, 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).

[30]  V. Pouget,et al.  Evaluation of recent technologies of non-volatile RAM , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.