论文信息 - A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits

A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits

In this study, a very high performance novel balanced complementary metal–oxide–semiconductor (CMOS) has been successfully developed on the Si(110) surface by introducing the accumulation-mode (AM) device structure at the first time. The novel balanced CMOS consists of an AM n-MOSFET and an inversion-mode (IM) p-MOSFET based on the different performances of the AM n- and p-MOSFETs, and the mechanism has been revealed. The advanced characteristics of this novel balanced CMOS transistor on Si(110) surface have also been investigated for the first time. In this paper, we experimentally demonstrate the possibility of realizing a very high performance CMOS with larger current drivability in both the n- and p-MOSFETs on Si(110) than that in conventional CMOS on Si(100). Ideal inverter characteristics have been observed in this balanced CMOS on Si(110) with only half the occupancy area of the conventional CMOS on Si(100). In addition, 1/ f noise in an AM n-MOSFET on Si(110) has been investigated and an obvious suppression has been confirmed in both the linear and saturation operation regions.

[1] K. Kotani,et al. 1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process , 2006, IEEE Transactions on Electron Devices.

[2] Tadahiro Ohmi,et al. New era of silicon technologies due to radical reaction based semiconductor manufacturing , 2006 .

[3] Tadahiro Ohmi,et al. Total Room Temperature Wet Cleaning for Si Substrate Surface , 1996 .

[4] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[5] Bram Nauta,et al. A 70-MS/s 110-mW 8-b CMOS folding and interpolating A/D converter , 1995 .

[6] T. Ohmi,et al. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface , 2007, IEEE Transactions on Electron Devices.

[7] Tadahiro Ohmi,et al. Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices , 2006 .

[8] Hisashi Hara,et al. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces , 1971 .