Comparison of Power Gain Performance between Conventional and Independently Biased HBT Cascode Chips

Abstract This paper aims to study power gain performance of independently biased cascode structure in comparison to that of conventional one at 1.9 GHz band by employing a monolithic microwave integrated circuit (MMIC) InGaP/GaAs heterojunction bipolar transistor (HBT) cascode chip. It is found that proposed cascode structure can deliver superior power gain performance over conventional one by setting appropriate bias conditions.