论文信息 - Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode

Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode

In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET and antiparallel diode for the application in a voltage source inverter (VSI). The body diode was found to dissipate not negligible switching losses. The effect of a silicon carbide Schottky barrier diode in high current SiC power modules is shown. Calculating the power capability, it is shown that the MOSFET inverter without SBD has the higher power density.

[1] Tobias Appel,et al. Bipolar reverse recovery behavior of the body-diode of a SiC JFET , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[2] Mark-M. Bakran,et al. New Approaches to Improve the Performance of Inductive Current Sensors , 2015 .

[3] J. Rice,et al. Third quadrant behavior of SiC MOSFETs , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[4] Mohammad Hamed Samimi,et al. The Rogowski Coil Principles and Applications: A Review , 2015, IEEE Sensors Journal.

[5] M. Bakran,et al. Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-Diode - regarding Dead-Time , 2015 .

[6] Serge Bontemps,et al. Evaluation of the need for SiC SBD in parallel with SiC MOSFETs in a module phase leg configuration , 2015 .

[7] Josef Lutz,et al. The influence of turn-off dead time on the reverse-recovery behaviour of synchronous rectifiers in automotive DC/DC-converters , 2009, 2009 13th European Conference on Power Electronics and Applications.