论文信息 - Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAs(Sb) and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6×10−5Ωcm2.

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