Programmable logic using giant-magnetoresistance and spin-dependent tunneling devices (invited)
暂无分享,去创建一个
[1] Schreiber,et al. Layered magnetic structures: Evidence for antiferromagnetic coupling of Fe layers across Cr interlayers. , 1986, Physical review letters.
[2] Etienne,et al. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. , 1988, Physical review letters.
[3] Binasch,et al. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. , 1989, Physical review. B, Condensed matter.
[4] M. N. Baibich,et al. Magnetic and transport properties of Fe/Cr superlattices (invited) , 1990 .
[5] A 512 K-bit magneto resistive memory with switched capacitor self-referencing sensing , 1992 .
[6] R. S. Beech,et al. Magnetic field sensors using GMR multilayer , 1994 .
[7] T. Miyazaki,et al. Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction , 1995 .
[8] Kinder,et al. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.
[9] V. Speriosu,et al. Spin-valve RAM cell , 1995 .
[10] R. S. Beech,et al. The architecture of a high performance mass store with GMR memory cells , 1995 .
[11] J. Anderson,et al. Spin dependent tunneling devices fabricated using photolithography , 1996 .
[12] Jun Shen,et al. Logic devices and circuits based on giant magnetoresistance , 1997 .
[13] Timothy J. Moran,et al. Magnetoresistive sensor for weak magnetic fields , 1997 .
[14] R. Geiger,et al. Field Programmable Logic Gates Using GMR Devices , 1997, 1997 IEEE International Magnetics Conference (INTERMAG'97).
[15] Anita Fink,et al. Picotesla field sensor design using spin-dependent tunneling devices , 1998 .
[16] William C. Black,et al. Demonstration of a four state sensing scheme for a single Pseudo-Spin Valve GMR bit , 1999 .
[17] W. C. Black,et al. A generalized HSPICE/sup TM/ macro-model for pinned spin-dependent-tunneling devices , 1999 .