2.5 A high-efficiency multiband Class-F power amplifier in 0.153µm bulk CMOS for WCDMA/LTE applications

Rapid growth in LTE smart phones has increased the demand for multiband power amplifiers (PAs) that have low cost and high efficiency. This paper describes a multiband WCDMA/LTE PA fabricated in a low-cost 0.153µm (85% shrink of 0.18µm) bulk CMOS process that has the highest PAE among published CMOS WCDMA/LTE PAs in [1–6]. Notably, the PA implemented a Class-F output matching network (MN) that maximizes Psat and PAE at Psat and improves linearity.

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