Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET

[1]  Micro-pixel array of organic light-emitting diodes applying imprinting technique with a polymer replica , 2009 .

[2]  A. Chin,et al.  Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors , 2008, IEEE Electron Device Letters.

[3]  Takeo Kawase,et al.  Very high-mobility organic single-crystal transistors with in-crystal conduction channels , 2007 .

[4]  Yue‐Min Xie,et al.  Low-temperature sol–gel processed AlOx gate dielectric buffer layer for improved performance in pentacene-based OFETs , 2016 .

[5]  F. Yakuphanoglu,et al.  A pentacene thin film transistor with good performance using sol–gel derived SiO2 gate dielectric layer , 2013 .

[6]  Kazuo Takimiya,et al.  Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors , 2007 .

[7]  H. Ishiwara,et al.  Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal–Oxide–Semiconductor Diodes with Yb Donor Layer , 2012 .

[8]  H. Ishiwara,et al.  Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors , 2011 .

[9]  Sugawa Shigetoshi,et al.  Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering , 2015 .

[10]  F. Krebs.  Fabrication and processing of polymer solar cells: A review of printing and coating techniques , 2009 .

[11]  Heinz von Seggern,et al.  n-type organic field-effect transistor based on interface-doped pentacene , 2004 .

[12]  H. Seggern,et al.  Complementary inverter based on interface doped pentacene , 2005 .

[13]  H. Klauk,et al.  Ultralow-power organic complementary circuits , 2007, Nature.

[14]  T. Ohmi,et al.  Rotation magnet sputtering: Damage-free novel magnetron sputtering using rotating helical magnet with very high target utilization , 2009 .

[15]  Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer , 2017 .

[16]  H. Meng,et al.  Solution-based silk fibroin dielectric in n-type C60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer , 2013 .

[17]  Ute Zschieschang,et al.  High-mobility polymer gate dielectric pentacene thin film transistors , 2002 .

[18]  Robert A. Street,et al.  Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport , 2003 .

[19]  K. Ueno,et al.  Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes , 2009 .

[20]  H. Ishiwara,et al.  Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators , 2014, IEEE Transactions on Electron Devices.

[21]  Tetsuo Tsutsui,et al.  Ambipolar pentacene field-effect transistors with calcium source-drain electrodes , 2004 .

[22]  Sangyoon Lee,et al.  Effects of hydroxyl groups in polymeric dielectrics on organic transistor performance , 2006 .

[23]  Tadahiro Ohmi,et al.  High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer , 2016, IEICE Trans. Electron..

[24]  Young-Geun Ha,et al.  Low-voltage pentacene thin-film transistors using Hf-based blend gate dielectrics , 2016 .

[25]  Wei Huang,et al.  Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer , 2013 .

[26]  Roland Schmechel,et al.  Organic CMOS technology by interface treatment , 2006, SPIE Optics + Photonics.

[27]  A. Chin,et al.  Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric , 2009, IEEE Electron Device Letters.