Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

[1]  A. Deneuville,et al.  Deep-level transient spectroscopy in the depletion zone of boron-doped homoepitaxial diamond films , 2000 .

[2]  Pierre Gibart,et al.  Proton bombardment-induced electron traps in epitaxially grown n-GaN , 1999 .

[3]  Pierre Gibart,et al.  AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity , 1998 .

[4]  C. Beling,et al.  DX-like properties of the EL6 defect family in GaAs , 1998 .

[5]  P. Vennégués,et al.  Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE , 1998 .

[6]  V. Walle,et al.  DX-center formation in wurtzite and zinc-blende Al x Ga 1-x N , 1998 .

[7]  Risto M. Nieminen,et al.  Point-defect complexes and broadband luminescence in GaN and AlN , 1997 .

[8]  T. C. Huang,et al.  EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY , 1995 .

[9]  Isamu Akasaki,et al.  Deep level defects in n‐type GaN , 1994 .

[10]  Theeradetch Detchprohm,et al.  Analysis of deep levels in n‐type GaN by transient capacitance methods , 1994 .

[11]  B. Chung,et al.  The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy , 1992 .

[12]  J. Weese.  A reliable and fast method for the solution of Fredhol integral equations of the first kind based on Tikhonov regularization , 1992 .

[13]  E. Meijer,et al.  Transient current measurements for the characterization of deep defects in semiconductors , 1992 .

[14]  L. Dobaczewski,et al.  Ionization and capture kinetics of DX centres in AlGaAs and GaSb: approach for a negative-U defect , 1991 .