Reduction of linewidth enhancement factor in InGaAsP-InP modulation-doped strained multiple-quantum-well lasers

The linewidth enhancement factor alpha in InGaAsP-InP modulation-doped strained multiple-quantum-well (MQW) lasers has been evaluated theoretically and experimentally. A reduction of the alpha -parameter due to modulation doping is demonstrated. A small alpha -parameter of less than 1 is obtained not at wavelength for the gain peak but within certain range of wavelength where the gain is positive. The smaller alpha -parameter in modulation-doped strained MQW lasers should result in performance improvements that are advantageous for optical communication system applications. >

[1]  T. Koch,et al.  Nature of wavelength chirping in directly modulated semiconductor lasers , 1984 .

[2]  C. Henry.  Theory of the linewidth of semiconductor lasers , 1982 .

[3]  Kazuhisa Uomi,et al.  Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory , 1990 .

[4]  J. V. Collins,et al.  Measurements of the semiconductor laser linewidth broadening factor , 1983 .

[5]  K. Vahala,et al.  Measurement of the linewidth enhancement factor α of semiconductor lasers , 1983 .

[6]  N. Dutta,et al.  Linewidth enhancement factor for InGaAs/InP strained quantum well lasers , 1990 .

[7]  Y. Yoshikuni,et al.  Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping , 1992, IEEE Photonics Technology Letters.

[8]  10 Gbit/s low chirp performance of strained layer multiquantum well DFB laser , 1991 .

[9]  N. Chinone,et al.  Linewidth enhancement factor in strained quantum well lasers , 1989, IEEE Photonics Technology Letters.

[10]  Kerry J. Vahala,et al.  Measurement of the linewidth enhancement factor alpha of semiconductor lasers , 1983 .

[11]  L. F. Tiemeijer,et al.  High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers , 1991 .

[12]  Yuzo Yoshikuni,et al.  Theoretical study on enhanced differential gain and extremely reduced linewidth enhancement factor in quantum-well lasers , 1993 .

[13]  Niloy K. Dutta,et al.  Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasers , 1987 .

[14]  Linewidth enhancement factor of 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well DFB lasers , 1991, IEEE Photonics Technology Letters.

[15]  TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice , 1991 .

[16]  K. Uomi,et al.  Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment , 1990 .