Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li
暂无分享,去创建一个
[1] Hideo Ohno,et al. Control of magnetism by electric fields. , 2015, Nature nanotechnology.
[2] K. Chow,et al. Mechanism of sign crossover of the anisotropic magneto-resistance in La0.7−xPrxCa0.3MnO3 thin films , 2015 .
[3] H. Ohno,et al. Properties of (Ga,Mn)As codoped with Li , 2014 .
[4] H. Ohno,et al. Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction , 2012 .
[5] P. Esquinazi,et al. Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer , 2012, Journal of physics. Condensed matter : an Institute of Physics journal.
[6] F. Terki,et al. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors. , 2012, Journal of nanoscience and nanotechnology.
[7] Wei-gang Wang,et al. Electric-field-assisted switching in magnetic tunnel junctions. , 2012, Nature materials.
[8] J. Majewski,et al. Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors. , 2012, Physical review letters.
[9] Satoshi Kokado,et al. Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe$_4$N, and Half-Metallic Ferromagnet: A Systematic Analysis , 2011, 1111.4864.
[10] F. Freimuth,et al. Origin of the planar Hall effect in nanocrystalline Co60Fe20B20. , 2011, Physical review letters.
[11] P. Dederichs,et al. Computational materials design for high- T c (Ga, Mn)As with Li codoping , 2011 .
[12] Kazunori Sato,et al. Interstitial Donor Codoping Method in (Ga,Mn)As to Increase Solubility of Mn and Curie Temperature , 2011 .
[13] Zongxin Zhang,et al. Angular dependent magnetoresistance with twofold and fourfold symmetries in A-type antiferromagnetic Nd0.45Sr0.55MnO3 thin film , 2010 .
[14] Hideo Ohno,et al. Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures , 2010 .
[15] X. Liu,et al. Asymmetry in the reorientation process of magnetization for crossing the [11¯0] and the [110] directions in Ga1−xMnxAs epilayers , 2010 .
[16] W. Wegscheider,et al. Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs , 2010, 1002.0563.
[17] T. Zhao,et al. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films , 2009 .
[18] J. Schliemann,et al. Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities , 2009, 0904.3785.
[19] T. Jungwirth,et al. Magnetocrystalline anisotropies in (Ga,Mn)As: Systematic theoretical study and comparison with experiment , 2009, 0904.0993.
[20] J. Furdyna,et al. Ferromagnetic semiconductor GaMnAs , 2009 .
[21] A. Tulapurkar,et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. , 2009, Nature nanotechnology.
[22] K. Chow,et al. Dramatic strain induced modification of the low field anisotropic magnetoresistance in ultrathin manganite films , 2008 .
[23] H. Ohno,et al. Magnetization vector manipulation by electric fields , 2008, Nature.
[24] X. Liu,et al. GaMnAs-based hybrid multiferroic memory device . , 2008, 0801.4191.
[25] A. Rushforth,et al. Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures , 2008, 0801.0886.
[26] A. Rushforth,et al. Anisotropic magnetoresistance components in (Ga,Mn)As. , 2007, Physical review letters.
[27] C. Kumpf,et al. Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation. , 2007, Physical review letters.
[28] A. Marty,et al. Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets , 2007, Science.
[29] H. Ohno,et al. Magnetic anisotropy in (Ga,Mn)As probed by magnetotransport measurements , 2006 .
[30] J. Furdyna,et al. Ferromagnetic resonance in Ga1−xMnxAs dilute magnetic semiconductors , 2006 .
[31] C. Foxon,et al. In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films , 2004, cond-mat/0410544.
[32] H. Ohno,et al. Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain , 2004 .
[33] X. Liu,et al. Magnetic domain structure and magnetic anisotropy in Ga1-xMn(x)As. , 2003, Physical review letters.
[34] J. Sinova,et al. Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As , 2002, cond-mat/0206416.
[35] H. Ohno,et al. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors , 2000, cond-mat/0007190.
[36] A. Endo,et al. Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As , 2000 .
[37] T. Jungwirth,et al. Theory of magnetic anisotropy in III 1 − x Mn x V ferromagnets , 2000, cond-mat/0006093.
[38] H. Ohno,et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors , 2000, Science.
[39] H. Ohno,et al. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs , 1997 .
[40] K. Kakuno. A Consideration on Galvanomagnetic Phenomena in Ni–Fe Thin Films , 1994 .
[41] J. Furdyna,et al. Temperature Behavior of Uniaxial Anisotropy along [100] Direction in GaMnAs Films , 2012 .
[42] Yoichi Shiota,et al. Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. , 2011, Nature materials.
[43] J. Jan,et al. Galvamomagnetic and Thermomagnetic Effects in Metals , 1957 .