In this paper, we discuss recent progress that has been made in the development of high resolution X-ray imaging detectors using photoconducting films of lead iodide (PbI2). PbI2 is a wide bandgap semiconductor with high X- ray stopping efficiency. We have been investigating thick films of lead iodide which can be prepared in large areas in a cost effective manner. These films can be coupled to readout technologies such as amorphous silicon flat panel arrays and vidicon tubes to produce X-ray imaging detectors for applications such as mammography, fluoroscopy, X-ray diffraction and non-destructive evaluation. Recent results obtained when these PbI2 films are coupled to 512 X 512 flat panel a-Si:H array are reported. This includes dark current, signal and resolution measurements. Properties of lead iodide films which are relevant to imager performance are also discussed.