Novel SiC Power Module for Traction Power Inverters with Low Parasitic Inductances
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Marko Jaksic | John Czubay | Mehrdad Teimorzadeh | late Brian Peaslee | Ajay Patwardhan | Constantin Stancu | Terence Ward | Dawud Abu-Zama | Sung Chung | Ioan Suciu
[1] R. Burgos,et al. Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications , 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.
[2] K. Matsui,et al. High Junction Temperature and Low Parasitic Inductance Power Module Technology for Compact Power Conversion Systems , 2015, IEEE Transactions on Electron Devices.
[3] Dushan Boroyevich,et al. Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
[4] David Frey,et al. Optimized Power Modules for Silicon Carbide mosfet , 2018, IEEE Transactions on Industry Applications.
[5] Puqi Ning,et al. A Phase-Leg Power Module Packaged With Optimized Planar Interconnections and Integrated Double-Sided Cooling , 2014, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[6] L. Stevanovic,et al. Low inductance power module with blade connector , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
[7] J. Casady,et al. Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V , 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
[8] Paolo Mattavelli,et al. Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters , 2011, IEEE Transactions on Power Electronics.
[9] M. Glover,et al. High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.