Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

[1]  Hyoungsub Kim,et al.  Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability. , 2016, ACS applied materials & interfaces.

[2]  Hyoungsub Kim,et al.  Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition , 2015 .

[3]  S. Jang,et al.  Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate , 2014 .

[4]  Hyoungsub Kim,et al.  Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics. , 2014, ACS applied materials & interfaces.

[5]  Pramod Kumar,et al.  Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures , 2013 .

[6]  Jingsong Wei,et al.  Temperature dependence of the thermal properties of InSb materials used in data storage , 2013 .

[7]  V. Tokranov,et al.  Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces , 2013 .

[8]  Hyoungsub Kim,et al.  Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs. , 2013, ACS applied materials & interfaces.

[9]  S. Cho,et al.  Temperature induced delocalization of charge carriers and metallic phase in Co0.6Sn0.4Fe2O4 nanoparticles , 2012 .

[10]  A. Dimoulas,et al.  Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates , 2012, 1206.1887.

[11]  N. Taoka,et al.  1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density , 2012 .

[12]  M. G. Nolan,et al.  Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer , 2011 .

[13]  Susanne Stemmer,et al.  Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces , 2010 .

[14]  K. Chung,et al.  Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition , 2010 .

[15]  M. Caymax,et al.  Capacitance-voltage characterization of GaAs–Al2O3 interfaces , 2008 .

[16]  Akira Toriumi,et al.  Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors , 2007 .

[17]  Jack C. Lee,et al.  High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon , 2006 .

[18]  Chih-Hung Chen,et al.  A review of gate tunneling current in MOS devices , 2006, Microelectron. Reliab..

[19]  G. A. Farias,et al.  Effective masses and complex dielectric function of cubic HfO2 , 2004, 1204.2895.

[20]  Ho-Kyu Kang,et al.  Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor , 2003 .

[21]  T. Ma,et al.  Charge trapping in ultrathin hafnium oxide , 2002, IEEE Electron Device Letters.

[22]  R. Gutmann,et al.  Positive flatband voltage shift in MOS capacitors on n-type GaN , 2002, IEEE Electron Device Letters.

[23]  Okada A New Dielectric Breakdown Mechanism In Silicon Dioxides , 1997, 1997 Symposium on VLSI Technology.

[24]  D. Kotecki A review of high dielectric materials for DRAM capacitors , 1997 .

[25]  Daniel M. Fleetwood,et al.  Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides , 1996 .

[26]  H. Hasegawa,et al.  A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor , 1995 .

[27]  Zhang,et al.  Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. , 1991, Physical review letters.

[28]  C. Sah,et al.  The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors , 1966 .

[29]  Y. Kang,et al.  Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor , 2012 .

[30]  M. Hatanaka,et al.  A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films , 1996, Proceedings of International Reliability Physics Symposium.