Ion-based methods for optical thin film deposition

The optical properties of the dielectric oxide films SiO2, Al2O3, TiO2, ZrO2, CeO2 and Ta2O5 produced by ion-based techniques have been reviewed. The influence of ion bombardment during deposition is discussed in some detail and the various production techniques are described. Recent results on the deposition and properties of diamond-like carbon films are also reviewed. Finally, some examples of the practical applications of high quality dielectric oxide films are given.

[1]  M. Seah,et al.  Pure element sputtering yields using 500–1000 eV argon ions , 1981 .

[2]  P. Jones,et al.  Optical properties of zinc sulphide thin films prepared by sublimation in ultrahigh vacuum and by R.F. sputtering in argon , 1982 .

[3]  Miko Marinov,et al.  Effect of ion bombardment on the initial stages of thin film growth , 1977 .

[4]  Morio Kobayashi,et al.  Refractive‐index‐adjustable SiO2‐Ta2O5 films for integrated optical circuits , 1978 .

[5]  E. Taglauer.  Surface Modifications Due to Preferential Sputtering , 1982 .

[6]  M. Guseva,et al.  Effect of ion irradiation on the formation, structure and properties of thin metal films , 1976 .

[7]  J. Thornton.  Plasma-assisted deposition processes: Theory, mechanisms and applications☆ , 1983 .

[8]  C. Weissmantel.  Ion-based growth of special films: Techniques and mechanisms , 1982 .

[9]  D. Mckenzie,et al.  Optical properties of thin amorphous silicon and amorphous hydrogenated silicon films produced by ion beam techniques , 1983 .

[10]  Roger Kelly,et al.  Criteria for bombardment-induced structural changes in non-metallic solids , 1975 .

[11]  E. Khawaja,et al.  The optical properties of thin films of tantalum pentoxide and zirconium dioxide , 1975 .

[12]  Peter M. Martin,et al.  High band gap oxide optical coatings for 0.25 and 1.06 μm fusion lasers , 1980 .

[13]  K. L. Chopra,et al.  Thin Film Phenomena , 1969 .

[14]  Y. Homma,et al.  Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion Implantation , 1980 .

[15]  S. Ogura,et al.  Measurements of Spectral Characteristics of Optical Thin Film by Rapid Scanning Spectrophotometer , 1974 .

[16]  J. Brinkman.  On the Nature of Radiation Damage in Metals , 1954 .

[17]  E. Kaldis.  Current Topics in Materials Science , 1980 .

[18]  A potential energy scaling Monte Carlo simulation of thin film nucleation and growth , 1983 .

[19]  J. Albella,et al.  Optical properties of reactively sputtered Ta2O5 films , 1982 .

[20]  C. Deshpandey,et al.  Preparation and properties of Al2O3 films by d.c. and r.f. magnetron sputtering , 1982 .

[21]  P. Koidl,et al.  Role Of Hard Carbon In The Field Of Infrared Coating Materials , 1984 .

[22]  T. Motohiro,et al.  Monte Carlo simulation of the particle transport process in sputter deposition , 1984 .

[23]  D. Dobrev.  Ion-beam-induced texture formation in vacuum-condensed thin metal films☆ , 1982 .

[24]  S. Schiller,et al.  Features of and IN SITU measurements on absorbing TiOx films produced by reactive d.c. magnetron-plasmatron sputtering☆ , 1980 .

[25]  D. Gerstenberg,et al.  Physics of Thin Films , 1964 .

[26]  T. Giallorenzi,et al.  Sputtered thin films for integrated optics. , 1974, Applied optics.

[27]  P. Sigmund.  Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets , 1969 .

[28]  E N Leith,et al.  Space bandwidth requirements for three-dimensional imagery. , 1971, Applied optics.

[29]  H. Pulker,et al.  Refractive indices of TiO(2) films produced by reactive evaporation of various titanium-oxygen phases. , 1976, Applied optics.

[30]  S. Schiller,et al.  Influence of deposition parameters on the optical and structural properties of TiO2 films produced by reactive d.c. plasmatron sputtering , 1981 .

[31]  Harold R. Kaufman,et al.  Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology , 1982 .

[32]  P Sigmund,et al.  スパッタの理論 I 非晶質のスパッタ収量と多結晶ターゲット , 1969 .

[33]  R P Netterfield,et al.  Protective dielectric coatings produced by ion-assisted deposition. , 1984, Applied optics.

[34]  D. W. Henderson,et al.  Simulation of structural anisotropy and void formation in amorphous thin films , 1974 .

[35]  R. Bunshah.  Processes of the activated reactive evaporation type and their tribological applications , 1983 .

[36]  P. Martin,et al.  The neutralisation of low energy He+ scattered from Ni , 1981 .

[37]  R. Holm,et al.  ESCA studies on changes in surface composition under ion bombardment , 1977 .

[38]  D. M. Mattox,et al.  Structure Modification by Ion Bombardment during Deposition , 1972 .

[39]  D. Nir.  Stress relief forms of diamond-like carbon thin films under internal compressive stress , 1984 .

[40]  L. F. Donaghey,et al.  Preparation of suboxides in the Ti-O system by reactive sputtering , 1977 .

[41]  S. Ingrey,et al.  Fabrication of optical waveguides by ion-beam sputtering , 1976 .

[42]  P. Jones,et al.  Optical films of single crystal zinc selenide , 1982 .

[43]  R. Busch,et al.  Reactively sputtered oxide optical coatings for inertial confinement fusion laser components , 1979 .

[44]  T. Motohiro,et al.  Monte Carlo simulation of thermalization process of sputtered particles , 1983 .

[45]  J. Pivin.  An overview of ion sputtering physics and practical implications , 1983 .

[46]  S. Nakahara.  Microporosity in thin films , 1979 .

[47]  S. Schiller,et al.  Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films , 1979 .

[48]  W. Coleman.  Evolution of optical thin films by sputtering. , 1974, Applied optics.

[49]  R. L. Aagard,et al.  Optical waveguide characteristics of reactive dc‐sputtered niobium pentoxide films , 1975 .

[50]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[51]  P. Chaudhari,et al.  Computer simulation of amorphous thin films of hard spheres , 1977 .

[52]  U. Gibson,et al.  Ion beam processing for coating MgF2 onto ambient temperature substrates. , 1984, Applied optics.

[53]  C. Granqvist,et al.  Infrared optical properties of electron-beam evaporated silicon oxynitride films. , 1983, Applied optics.

[54]  F. Szofran,et al.  Growth and characterization of doped ZrO2 and CeO2 films deposited by bias sputtering , 1977 .

[55]  H. Kaufman.  Technology of ion beam sources used in sputtering , 1978 .

[56]  J. Coburn.  The influence of ion sputtering on the elemental analysis of solid surfaces , 1979 .

[57]  S. Ogura,et al.  Refractive index and packing density for MgF2 films: Correlation of temperature dependence with water sorption , 1975 .

[58]  R. Roy,et al.  Growth of titanium oxide crystals of controlled stoichiometry and order , 1972 .

[59]  R. Kelly,et al.  The sputtering of oxides part i: a survey of the experimental results , 1973 .

[60]  N. Tolk.  Inelastic ion-surface collisions , 1977 .

[61]  Optical losses of evaporation-deposited dielectric waveguides , 1975 .

[62]  G. Carter.  Ion Reflection, Penetration, and Entrapment in Solids , 1970 .

[63]  Toshinori Takagi,et al.  Role of ions in ion-based film formation , 1982 .

[64]  H. Küster,et al.  Activated reactive evaporation of TiO2 layers and their absorption indices , 1980 .

[65]  K. Morita,et al.  Reflection of keV light ions from compound targets , 1984 .

[66]  L. Pranevicius,et al.  Structure and properties of deposits grown by ion-beam-activated vacuum deposition techniques☆ , 1979 .

[67]  D. Joy,et al.  Ion‐beam‐deposited polycrystalline diamondlike films , 1976 .

[68]  Homer D. Hagstrum,et al.  Theory of Auger Ejection of Electrons from Metals by Ions , 1954 .

[69]  W. Pawlewicz,et al.  Microstructure control for sputter-deposited ZrO2, ZrO2·CaO and ZrO2·Y2O3 , 1982 .

[70]  R. Frank,et al.  Reactively Sputtered Silicon Oxynitride as a Dielectric Material for Metal‐Insulator‐Metal Capacitors , 1970 .

[71]  R. Bunshah,et al.  Synthesis of various oxides in the Ti−O system by reactive evaporation and activated reactive evaporation techniques , 1975 .

[72]  W. Heitmann.  Reactive evaporation in ionized gases. , 1971, Applied optics.

[73]  John A. Thornton,et al.  Influence of substrate temperature and deposition rate on structure of thick sputtered Cu coatings , 1975 .

[74]  P. Martin,et al.  Modification of the optical and structural properties of dielectric ZrO2 films by ion‐assisted deposition , 1984 .

[75]  R. S. Nowicki,et al.  Properties of rf‐sputtered Al2O3 films deposited by planar magnetron , 1977 .

[76]  Robert A. Buhrman,et al.  High‐quality submicron niobium tunnel junctions with reactive‐ion‐beam oxidation , 1980 .

[77]  S. Aisenberg,et al.  Ion‐Beam Deposition of Thin Films of Diamondlike Carbon , 1971 .

[78]  G. Wehner,et al.  SPUTTERING BY ION BOMBARDMENT , 1963 .

[79]  E. Hirsch,et al.  The effect of ion irradiation on the adherence of germanium films , 1978 .

[80]  I. Schuller,et al.  Thermalization of sputtered atoms , 1981 .

[81]  R. Bunshah,et al.  Activated Reactive Evaporation Process for High Rate Deposition of Compounds , 1972 .

[82]  R P Netterfield,et al.  Enhanced gold film bonding by ion-assisted deposition. , 1984, Applied optics.

[83]  W. C. Herrmann,et al.  E‐beam deposition characteristics of reactively evaporated Ta2O5 for optical interference coatings , 1981 .

[84]  J. McNeil,et al.  Ion-assisted deposition of optical thin films: low energy vs high energy bombardment. , 1984, Applied optics.

[85]  D. M. Mattox.  Fundamentals of Ion Plating , 1973 .

[86]  H A Macleod,et al.  Ion-beam-assisted deposition of thin films. , 1983, Applied optics.

[87]  K. Chopra.  GROWTH OF THIN METAL FILMS UNDER APPLIED ELECTRIC FIELD , 1965 .

[88]  D. Mathine,et al.  Optical properties of "diamondlike" carbon films: An ellipsometric study , 1983 .

[89]  John A. Thornton,et al.  Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings , 1974 .

[90]  J. Bohdansky,et al.  An analytical formula and important parameters for low‐energy ion sputtering , 1980 .

[91]  G. Carter,et al.  Ion bombardment of solids , 1968 .

[92]  B. Schweer,et al.  Investigation of light-ion sputtering of titanium using laser-induced fluorescence , 1982 .

[93]  S. Yoshida,et al.  Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam , 1984 .

[94]  J. Ziegler,et al.  Handbook of Range Distributions for Energetic Ions in All Elements , 1980 .

[95]  J. Greene,et al.  Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2 , 1983 .

[96]  E. Taglauer,et al.  Bombardment Induced Surface Damage in a Nickel Single Crystal Observed by Ion Scattering and Leed , 1973 .

[97]  E. Ritter.  Properties of optical film materials. , 1981, Applied optics.

[98]  J. Vossen,et al.  Thin Film Processes , 1979 .

[99]  D. S. Yee,et al.  Modification of niobium film stress by low‐energy ion bombardment during deposition , 1982 .

[100]  J. Joshi,et al.  Semiconducting transparent thin films: their properties and applications , 1984 .

[101]  R. F. Bunshah,et al.  The Influence of Ion Bombardment on the Microstructure of Thick Deposits Produced by High Rate Physical Vapor Deposition Processes , 1972 .

[102]  G. Betz,et al.  Sputtering by particle bombardment , 1983 .

[103]  D. Dobrev,et al.  The change in the structure of vacuum-condensed hexagonal close-packed metal films on ion bombardment , 1977 .

[104]  Ion beam sputter-deposited diamondlike films , 1982 .

[105]  C. Weissmantel,et al.  Structure and properties of quasi-amorphous films prepared by ion beam techniques☆ , 1980 .

[106]  D. E. Harrison,et al.  Low energy ion impact phenomena on single crystal surfaces , 1978 .

[107]  H. Leamy,et al.  Columnar microstructure in vapor-deposited thin films , 1977 .

[108]  John A. Thornton,et al.  II-2 – Cylindrical Magnetron Sputtering , 1978 .

[109]  G. Carter,et al.  The interaction of low energy ion beams with surfaces , 1981 .