Progress In Single Quantum Well Structures For High Power Laser Device Applications

Recent advances made in our laboratory toward performance optimization of (A1)GaAs quantum well lasers are described. Topics to he covered include: laser reliability for broad-area devices emitting less than 300mW and its relation to the epitaxial structure and operating current density; parametric crystal growth studies and the implications for device efficiency; realization of 57% cw power conversion efficiency in an oxide-defined device; progress in dry-etching technology including array fabrication and development of device-quality laser facets suitable for integration. Finally, work in the high-power regime (>5 Watt) will be discussed. This includes broad-area single-emitter lasers emitting 6W cw.