Measurement and modelling of sensitivity and noise of MOS magnetic field-effect transistors

Abstract The characteristics of magnetic field-sensitive split-drain MOSFETs (MAGFETs) have been experimentally measured. The sensitivity depends on the geometry and the operating point of the MAGFET. Particular attention is paid to the lateral parasitic conductance between the split drains. The equivalent spectral noise density of the magnetic flux density is measured. Additionally, a macro-model of the MAGFET has been developed for SPICE.