Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

Spectroscopic ellipsometry (SE) was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiNx) films with respect to their microstructure and stoichiometry. The films’ properties can be tailored by varying the energy of bombarding ions during sputter deposition and the substrate temperature (Td). The best metallic behavior of TiNx (resistivity 40 μΩ cm and conduction density 5.5×1022 electrons/cm3) has been observed in films developed with energy above 100 eV and Td⩾400 °C. A redshift of the optical gaps has been observed for overstoichiometric films, suggesting it as a sensitive probe to investigate the TiNx stoichiometry. The energy, strength, and broadening of the interband transitions were studied with respect to the energy of ions and Td and they were explicitly correlated with the TiNx crystal cell size and grain orientation. On the other hand, the study of intraband absorption has provided the conduction electron density with respect to ...

[1]  V. Milman,et al.  Density-functional study of bulk and surface properties of titanium nitride using different exchange-correlation functionals , 2000 .

[2]  M. Hansen,et al.  Constitution of Binary Alloys , 1958 .

[3]  C. Charitidis,et al.  In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices , 2000 .

[4]  Müller,et al.  Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics study. , 1987, Physical review. B, Condensed matter.

[5]  P. Wachter,et al.  Optical properties of TiN and ZrN , 1977 .

[6]  A. Perry,et al.  Variations in the reflectance of TiN, ZrN and HfN , 1988 .

[7]  G. Kamarinos,et al.  Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering , 1999 .

[8]  George H. Gilmer,et al.  Lattice Monte Carlo models of thin film deposition , 2000 .

[9]  Klein,et al.  Electronic structure of defects and impurities in III-V nitrides: Vacancies in cubic boron nitride. , 1996, Physical review. B, Condensed matter.

[10]  A. Perry,et al.  X-ray residual stress measurement in TiN, ZrN and HfN films using the Seemann-Bohlin method , 1992 .

[11]  G. Böhm,et al.  Zuordnung optischer Messgrössen zur elektronischen Bandstruktur in der Mischkristallreihe Ti(C,N) , 1972 .

[12]  J. Matthew,et al.  An estimate of the electron effective mass in titanium nitride using UPS and EELS , 1998 .

[13]  Collins,et al.  Evolution of the optical functions of aluminum films during nucleation and growth determined by real-time spectroscopic ellipsometry. , 1992, Physical review letters.

[14]  Collins,et al.  Evolution of the optical functions of thin-film aluminum: A real-time spectroscopic ellipsometry study. , 1993, Physical review. B, Condensed matter.

[15]  J. Sanz,et al.  The electronic structure of TiN and VN : X-ray and electron spectra compared to band structure calculations , 1997 .

[16]  Wladek Walukiewicz,et al.  Effect of nitrogen on the electronic band structure of group III-N-V alloys , 2000 .

[17]  S. Louie,et al.  Transition metals and their carbides and nitrides: Trends in electronic and structural properties , 1999 .

[18]  L. Porte,et al.  Vacancy effects in the x-ray photoelectron spectra of Ti N x , 1983 .

[19]  A. Perry A contribution to the study of poisson's ratios and elasticconstants of TiN, ZrN and HfN , 1990 .

[20]  F. Kakimoto,et al.  Lattice parameter of the non-stoichiometric compound TiNx , 1975 .

[21]  J. Hojo,et al.  Defect structure, thermal and electrical properties of Ti nitride and V nitride powders , 1977 .

[22]  U. Kreibig,et al.  Electronic properties of small silver particles: the optical constants and their temperature dependence , 1974 .

[23]  S. Logothetidis,et al.  New approach in the monitoring and characterization of titanium nitride thin films , 1999 .

[24]  T. Hara,et al.  Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems , 1991 .

[25]  Lars Hultman,et al.  Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering , 1995 .

[26]  I. Alexandrou,et al.  Electron microscopy characterization of TiN films on Si, grown by d.c. reactive magnetron sputtering , 1995 .

[27]  Klein,et al.  Electronic properties of transition-metal nitrides: The group-V and group-VI nitrides VN, NbN, TaN, CrN, MoN, and WN. , 1985, Physical review. B, Condensed matter.

[28]  Björn Karlsson,et al.  Optical constants and spectral selectivity of titanium carbonitrides , 1982 .

[29]  D. Cahill,et al.  Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers , 2000 .

[30]  M. Toney,et al.  Measurements of carbon thin films using x‐ray reflectivity , 1989 .

[31]  I. Petrov,et al.  High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation , 1995 .

[32]  C. Charitidis,et al.  Combined electrical and mechanical properties of titanium nitride thin films as metallization materials , 1999 .

[33]  G. Beyer,et al.  Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization , 2000 .

[34]  K. Kim,et al.  Structural, optical, and electronic properties of cubic TiNx compounds , 1999 .

[35]  S. Inoue,et al.  Effect of partial pressure on the internal stress and the crystallographic structure of r.f. reactive sputtered Ti-N films , 1999 .

[36]  Moustakas,et al.  Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN. , 1994, Physical review. B, Condensed matter.

[37]  Francis Levy,et al.  Optical and electronic properties of sputtered TiNx thin films , 1998 .

[38]  S. Logothetidis,et al.  Oxidation and structural changes in fcc TiNx thin films studied with X-ray reflectivity , 1998 .

[39]  A. Switendick,et al.  Electronic Band Structure of TiC, TiN, and TiO , 1965 .

[40]  Y. Omura,et al.  Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications , 1991 .

[41]  F. Wooten,et al.  Optical Properties of Solids , 1972 .

[42]  Stergios Logothetidis,et al.  The effect of substrate temperature and biasing on the mechanical properties and structure of sputtered titanium nitride thin films , 2000 .

[43]  R. Davis,et al.  Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface , 1992 .

[44]  D. Aspnes,et al.  Optical properties of Au: Sample effects , 1980 .

[45]  J. Humlíček,et al.  Ellipsometry and transport studies of thin-film metal nitrides , 1998 .

[46]  J. Fair,et al.  X‐ray photoemission spectra of reactively sputtered TiN , 1992 .

[47]  C. Anderson,et al.  A combined AES, resonant photoemission and EELS study of in-situ grown titanium nitride , 1997 .

[48]  C. Dimitriadis Carrier recombination at dislocations in epitaxial gallium phosphide layers , 1983 .

[49]  S. Adachi,et al.  Optical properties of TiN films deposited by direct current reactive sputtering , 2000 .