Analysis of acid-generating action of PAG in an EUV resist using acid-sensitive dyes

Researchers are currently examining various methods for determining the quantity of acid generated by a photoacid generator (PAG) and for analyzing acid-generating reactions using acid-sensitive dyes that react with acid and generate a color. Adding an acid-sensitive dye to the resist gives a clear grasp of the acid-generating action. The process involves applying a resist containing an acid-sensitive dye to a quartz substrate; exposing the substrate; and measuring and evaluating the absorbance of a chromogenic substance near 530 nm using a spectroscope. The method determines the rate constant for acid generation (Dill C parameter) during exposure based on the relationship between transmissivity at 530 nm and exposure dose. Using this method, we obtained and compared rate constants for acid generation (C parameters) as part of our study of dependence on the quantity of quencher in the EUV resist. Our results indicate a new model that accounts for the quencher concentration parameter would be useful in analyzing dependence on the quantity of quencher. This paper presents these findings, together with the results of studies of profile simulations using the quencher concentration parameter obtained in the experiments.

[1]  Atsushi Sekiguchi,et al.  Analysis of the Generating Action of the Acid from PAG using Acid Sensitive Dyes (2) , 2012 .

[2]  J. Lindsey,et al.  PhotochemCAD ‡ : A Computer‐Aided Design and Research Tool in Photochemistry , 1998 .

[3]  Hiroki Yamamoto,et al.  Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists , 2007 .

[4]  C. Willson,et al.  Chemical amplification in the design of dry developing resist materials , 1983 .

[5]  Charles R. Szmanda,et al.  Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157 nm , 2001, SPIE Advanced Lithography.

[6]  George A. Reynolds,et al.  New coumarin dyes with rigidized structure for flashlamp-pumped dye lasers , 1975 .

[7]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[8]  Toshiro Itani,et al.  Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists , 1996 .

[9]  Hiroki Yamamoto,et al.  Dependence of acid generation efficiency on the protection ratio of hydroxyl groups in chemically amplified electron beam, x-ray and EUV resists , 2004 .

[10]  Gerd Pohlers,et al.  Comparison of acid-generating efficiencies in 248 and 193-nm photoresists , 2001, SPIE Advanced Lithography.

[11]  Hikaru Momose,et al.  Newly developed acrylic copolymers for ArF photoresist , 2002, SPIE Advanced Lithography.

[12]  P. S. Hauge,et al.  Characterization of positive photoresist , 1975, IEEE Transactions on Electron Devices.

[13]  Hiroki Yamamoto,et al.  Proton Dynamics in Chemically Amplified Electron Beam Resists , 2004 .

[14]  Hikaru Momose,et al.  Effect of end group structures of methacrylate polymers on ArF photoresist performances , 2001, SPIE Advanced Lithography.

[15]  C. Willson,et al.  APPLICATIONS OF PHOTOINITIATORS TO THE DESIGN OF RESISTS FOR SEMICONDUCTOR MANUFACTURING. , 1983 .

[16]  Mingxing Wang,et al.  Effect of PAG and matrix structure on PAG acid generation behavior under UV and high-energy radiation exposure , 2008, SPIE Advanced Lithography.

[17]  Todd R. Younkin,et al.  A new technique for studying photo-acid generator chemistry and physics in polymer films using on-wafer ellipsometry and acid-sensitive dyes , 2008, SPIE Advanced Lithography.

[18]  S. Tagawa,et al.  Polymer screening method for chemically amplified electron beam and X-ray resists , 2003, Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.

[19]  Takashi Nishimura,et al.  Chemical composition distribution analysis of photoresist copolymers and influence on ArF lithographic performance , 2007, SPIE Advanced Lithography.