论文信息 - Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT VTH shift can be reduced with saturation region operation. There are two mechanisms that cause the VTH shift in a saturation region: One that appears with continuous current flow and the other that appears with the transient charge injection into a gate insulator. SiH4 flow in hydrogen plasma with a pumping flow period shorter than the gas residence time produces a high-transconductance microcrystalline/amorphous silicon TFT.

Takatoshi Tsujimura | T. Tsujimura

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