Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET
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Chao Zhao | Hushan Cui | Huaxiang Yin | Jinjuan Xiang | Jianfeng Gao | Wenwu Wang | Junfeng Li | Jianfeng Gao | Junfeng Li | H. Yin | Chao Zhao | Wenwu Wang | Yuqiang Ding | Xiaolei Wang | J. Xiang | H. Cui | Tingting Li | Yanbo Zhang | Chongying Xu | Xiaolei Wang | Tingting Li | Yanbo Zhang | Yuqiang Ding | Chongying Xu
[1] J. Robertson. High dielectric constant gate oxides for metal oxide Si transistors , 2006 .
[2] Kai-Erik Elers,et al. TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD , 2005 .
[3] Glen D. Wilk,et al. Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics , 2007 .
[4] S. George. Atomic layer deposition: an overview. , 2010, Chemical reviews.
[5] John Robertson,et al. Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces , 2005 .
[6] S. Rhee,et al. Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases , 2014 .
[7] M. Ritala,et al. Trimethylaluminum as a Reducing Agent in the Atomic Layer Deposition of Ti(Al)N Thin Films , 2001 .
[8] Sanghun Jeon,et al. Fabrication of Robust Triple-Ti1-xAlxN Metal Gate by Atomic Layer Deposition , 2010 .
[9] S. Jeon,et al. Tunable Work-Function Engineering of TiC–TiN Compound by Atomic Layer Deposition for Metal Gate Applications , 2010 .
[10] C. Wenger,et al. Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate-last CMOS and MIM Devices , 2008 .
[11] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[12] Qiang Xu,et al. Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology , 2014 .