The missing memristor found
暂无分享,去创建一个
[1] T. W. Hickmott. LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .
[2] D. Morgan,et al. Electrical phenomena in amorphous oxide films , 1970 .
[3] L. Chua. Memristor-The missing circuit element , 1971 .
[4] D. L. Staebler,et al. Electrocoloration in SrTiO3: Vacancy Drift and Oxidation-Reduction of Transition Metals , 1971 .
[5] L.O. Chua,et al. Memristive devices and systems , 1976, Proceedings of the IEEE.
[6] J. F. Stoddart,et al. A [2]Catenane-Based Solid State Electronically Reconfigurable Switch , 2000 .
[7] C. Gerber,et al. Reproducible switching effect in thin oxide films for memory applications , 2000 .
[8] R. Stanley Williams,et al. Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices , 2004 .
[9] M. Kozicki,et al. Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.
[10] K. Terabe,et al. Quantized conductance atomic switch , 2005, Nature.
[11] René A. J. Janssen,et al. Electrically Rewritable Memory Cells from Poly(3‐hexylthiophene) Schottky Diodes , 2005 .
[12] Judy S. DeLoache,et al. Mindful of symbols. , 2005, Scientific American.
[13] R Stanley Williams,et al. Crossbar nanocomputers. , 2005, Scientific American.
[14] R. Stanley Williams,et al. Electrical characterization of Al/AlOx/molecule/Ti/Al devices , 2005 .
[15] Rainer Waser,et al. Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films , 2006 .
[16] R. Waser,et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.
[17] Yoshiaki Uesu,et al. Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films , 2006 .
[18] Masashi Kawasaki,et al. Interface resistance switching at a few nanometer thick perovskite manganite active layers , 2006 .
[19] Satish Patil,et al. Organic nonvolatile memory by dopant-configurable polymer , 2006 .
[20] R. Waser,et al. Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .
[21] Zheng Wang,et al. Field-programmable rectification in rutile TiO2 crystals , 2007 .
[22] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[23] J. C. Scott,et al. Nonvolatile Memory Elements Based on Organic Materials , 2007 .
[24] Gerhard Müller,et al. A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control , 2007, IEEE Journal of Solid-State Circuits.
[25] D. Strukov,et al. Defect-tolerant architectures for nanoelectronic crossbar memories. , 2007, Journal of nanoscience and nanotechnology.
[26] D. Tennant,et al. Chemical modification of the electronic conducting states in polymer nanodevices. , 2007, Nature nanotechnology.
[27] R. Stanley Williams,et al. Internal Structure of a Molecular Junction Device: Chemical Reduction of PtO2 by Ti Evaporation onto an Interceding Organic Monolayer , 2007 .