论文信息 - On the deeply depleted MOS capacitor

On the deeply depleted MOS capacitor

It is shown that the length of that portion of the depleted region of a deeply depleted MOS capacitor which is active in generating carriers can be found by considering the effect of carrier concentrations on generation rate.

[1] R. Poirier,et al. Experimental study of semiconductor surface conductivity , 1966 .

[2] F. P. Heiman,et al. On the determination of minority carrier lifetime from the transient response of an MOS capacitor , 1967 .