HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

The completely surface-potential-based MOSFET model HiSIM-HV for high-voltage applications of up to several hundred volts is reviewed, and recently developed new model capabilities are presented. HiSIM-HV enables a consistent evaluation of current and capacitance characteristics for symmetric and asymmetric high-voltage MOSFETs due to a consistent description of the potential distribution across the MOSFET channel as well as the resistive drift regions. The anomalous features, often observed in the capacitances, are explained by large potential drops in the drift regions. Accurate modeling of the overlap region between the gate and drift region is also demonstrated. Different device features based on different device structures are well explained by the geometrical differences.

[1]  F. Van de Wiele,et al.  A long-channel MOSFET model , 1979 .

[2]  Dominique Savignac,et al.  Unified complete MOSFET model for analysis of digital and analog circuits , 1994, ICCAD '94.

[3]  H.J. Mattausch,et al.  HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

[4]  J. Kuo,et al.  Quasi-saturation capacitance behavior of a DMOS device , 1997 .

[5]  Hans Jurgen Mattausch,et al.  Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization , 2008 .

[6]  M. Tack,et al.  LDMOS Capacitance Analysis versus Gate and Drain Biases, Based on Comparison between TCAD Simulations and Measurements , 2001, 31st European Solid-State Device Research Conference.

[7]  H.J. Mattausch,et al.  HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[8]  Giorgio Baccarani,et al.  Analytical i.g.f.e.t. model including drift and diffusion currents , 1978 .

[9]  Mitiko Miura-Mattausch,et al.  High-Voltage MOSFET Model Valid for Device Optimization , 2009 .

[10]  Krishna Shenai,et al.  Modeling and characterization of an 80 V silicon LDMOSFET for emerging RFIC applications , 1998 .

[11]  K. Shenai,et al.  Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion , 1990 .

[12]  C. Dragon,et al.  High efficiency LDMOS power FET for low voltage wireless communications , 1996, International Electron Devices Meeting. Technical Digest.

[13]  Mitiko Miura-Mattausch,et al.  Spatial Distribution Analysis of Self-Heating Effect in High-Voltage MOSFETs , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[14]  F. Krummenacher,et al.  Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs , 2006, 2006 International Electron Devices Meeting.

[15]  Takaki Yoshida,et al.  HiSIM-LDMOS/HV: A Complete Surface-Potential-Based MOSFET Model for High Voltage Applications , 2008 .

[16]  J. Brews.  A charge-sheet model of the MOSFET , 1978 .

[17]  A. Wood,et al.  High performance silicon LDMOS technology for 2 GHz RF power amplifier applications , 1996, International Electron Devices Meeting. Technical Digest.

[18]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[19]  H.J. Mattausch,et al.  HiSIM2 Circuit simulation - Solving the speed versus accuracy crisis , 2006, IEEE Circuits and Devices Magazine.

[20]  G. Gildenblat,et al.  PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation , 2006, IEEE Transactions on Electron Devices.